1) For the questions below use only your own words to explaina) Consider voltage gain of an amplifier is given as -120 and the efficiency according to physical lawsmust be less than 1 so explain that how it is possible?b) Explain the reason of minus sign in gain of the amplifier.c) What is ann channel FET device?d) What is the difference between npn and pnp transistor?e) Draw the energy level diagrams of semiconductor, insulator and conductor.D Show and explain the amplification in AC domain.g) List the major differences between FET and BJTh) Draw a generic transfer curve for a diode. Define breakdown voltage, zener region, threshold valueof a diode and show these elements on the curve.i) Explain the conditions of cut-off, saturation and linear region of a transistor and show on thetransfer curve) What is avalanche current? Explain.+20 Vle imA)60 A1.SkQ39 &Qy or10 uFVex3.3 A20.510 A= SO20

Dear student as per our guidelines we are supposed to solve only one question in which it should be…

1) For the questions below use only your own words to explain a) Consider voltage gain of an amplifier is given as -120 and the efficiency according to physical laws must be less than 1 so explain that how it is possible? b) Explain the reason of minus sign in gain of the amplifier. c) What is ann channel FET device?

1) For the questions below use only your own words to explain a) Consider voltage gain of an amplifier is given as -120 and the efficiency according to physical laws must be less than 1 so explain that how it is possible? b) Explain the reason of minus sign in gain of the amplifier. c) What is ann channel FET device?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

TransistorsFill in the blanks with the words below:amplify, bipolar transistor, current, device, embedded, field, field-effect transistor, fundamental,implemented, milestones, standardized, terminals, ubiquitous, vacuum tube, voltageA transistor is a semiconductor 1……….. used to amplify or switch electronic signals and electrical power. It iscomposed of semiconductor material usually with at least three 2 …………. for connection to an external circuit. A3. ………… or current applied to one pair of the transistor's terminals controls the current through another pair ofterminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can4 …………… a signal. Today, some transistors are packaged individually, but many more are found 5 …………. inintegrated circuits.The transistor is the 6 …………. building block of modern electronic devices, and is 7. …………in modern electronicsystems. Julius Edgar Lilienfeld patented a 8 …………….. in 1926 but it was not…
Q1: for a silicon transistor in the figure below = 200 dc {What is the voltage between the collector and emitter VCE, drawing the load line and finding the Q point
In semiconductors to maximize the the radiative recombination efficiency n,: O a. The non-radiative recombination rate Ror should be minimized. O b. Tr/Tnr should be as large as possible. O c. Tnr should be very smal1 compared to Tr. O d. T and Tar should be equal O e. Non of the given choices is correct.
Describe the forward and reverse characteristics of PN-Junction diode. What is order of forward resistance and reverse resistance of the PN Junction Diode. Give the circuit of the Bridge Rectifier and explain its operation. What is the PIV of each diode used in Bridge Rectifier? Give the circuit of a Self-biased NPN transistor and design it for operation in active region. Give the hybrid parameter model of Bipolar NPN transistor in common emitter onfiguration. Describe its each parameter. What are four types of MOSFETS you know? Give their physical cross-sectional view, symbols and also give Transfer Characteristics of each one. Give the circuit of an inverting and a non-inverting amplifiers using operational Amplifier and design each one for a gain of magnitude k= 4.
You have been given a Silicon-based BJT transistor with the leads labelled as shown in the figure: Plastic Body TO-92 1. Emitter 2. Base 3. Collector 123 Given that this transistor is either a PNP or NPN variant, create a step-by-step procedure for using a DMM with "diode check" feature to identify whether (a) it's an NPN or PNP (b) it's a PNP or NPN that has failed in some way (e.g. failed as open, or as a short)
a. Design the network of below to maintain VL at 12V for a load variation(IL) from 0 mA to 200mA. That is determine RS and VZ. b. Determine PZ max for the Zener Diode if part (a).
An intrinsic semiconductor is neither a good conductor nor a good insulator. Select one: O True O False A varactor is a pn junction diode that always operates in reverse-bias and is doped to maximize the inherent capacitance of the depletion region. Select one: O True O False A simple diode rectifier has 'ripples' in the output wave which makes it unsuitable as a DC source. To overcor this on e can use
04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)
Answer briefly the following questions: a. Suggest a circuit for a half wave rectifier and find the r.m.s and the average values. b. Draw the input and output characteristics of a Bipolar Junction Transistor connected in common base configuration. c. Write the collector current equation presented in PNP transistors work in cut-off region. d. Suggest an electronic circuit using a diode to work as variable capacitor. e. Explain how the transistor acts as an amplifier.
Find the performance parameters (FF, RF and n) for the Single phase bridge uncontrolled rectifier with RL load. If the phase voltage: Vph(t) = Vm sin(wt). Draw the circuit diagram and sketch the voltages and current waveforms.
What are transferred electron devices (TEDs)? A Gunn diode, being one example of TED is atwo-terminal passive semiconductor electronic component, which is used in high-frequencyelectronics. Discuss the principle of operation of this diode with help of energy band diagram.
A transistor current is given below. The Zener diode breakdown voltage is 5.3V as shown. Take base to emitter voltage drop to be 0.6V. The value of the current gain ß is ..... 4.7kQ2 0.5mA ↓ 5.3V www 41 + 0.6- www 22092 47092