1. N-channel enhancement MOSFET control voltage is applied at the controlling the current that is the drain terminal Select one: a. source, entering b. gate, entering C. drain, entering d. source, leaving e. gate, leaving f. drain, leaving 2. In a common source amplifier, the input is fed to the while the output is taken from the _____ Select one: a. source, gate b. source, drain C. gate, source d. gate, drain e. drain, source f. drain, gate 3. In the saturation region of a MOSFET, choose all of the equations that apply (Hint: there are 3) Select one or more: a. VGS >= VTH b. VGS= VGS- VTH g. VDSVGS- VTH ID-k[(2(VGS-VTH)VDS-VDS²]

1. N-channel enhancement MOSFET control voltage is applied at the controlling the current that is the drain terminal Select one: a. source, entering b. gate, entering C. drain, entering d. source, leaving e. gate, leaving f. drain, leaving 2. In a common source amplifier, the input is fed to the while the output is taken from the _____ Select one: a. source, gate b. source, drain C. gate, source d. gate, drain e. drain, source f. drain, gate 3. In the saturation region of a MOSFET, choose all of the equations that apply (Hint: there are 3) Select one or more: a. VGS >= VTH b. VGS= VGS- VTH g. VDSVGS- VTH ID-k[(2(VGS-VTH)VDS-VDS²]

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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1. A BJT transistor to work as a switch must be biased in the region of: Select one:a. cutb. Saturationc. Active For each transistor configuration, the current gain can be determined directly ............ 2. Select one:a. from voltage gain, defined load and input impedanceb. from the voltage gain, the defined load and the output impedancec. from current gain, defined load and input impedance 3. The phase relationship between the input and output voltage signal is: ...... Select one:a. 90 degreesb. 180 degreesc. 0 degree
(a) Determine the operation region of a P-channel enhancement MOSFET if: (i) (ii) the gate is connected to the source. the gate is connected to the drain. Sketch and label lp versus Vo for a P-channel enhancement MOSFET if the gate is connected to the drain. (b)
For the Enhancement-type MOSFET in following figure, Determine VD, and VS
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.
Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.
Conclusion: Questions: [1] How to check transistor with help of multimeter? [2] How to check type of transistor (NPN or PNP) with help of multimeter? [3] Define current gain of the transistor in CE configuration. What is the DC current gain you obtain in this practical?
1 The AC input to a common emitter amplifier (Figure 1) is such that it is comparable to thermal voltage VT. For such an amplifier: a. Please show how a hybrid – T small-signal model would look like. Do not ignore early effect. b. Please derive relation for the terminal voltage gain and overall voltage gain. Vcc Rc R RE C Figure 1 You uolont oirouit
4 For the transistor shown in below figure, Calculate the value of R, that will just make the transistor work as closed switch. Hence Bpc= 80, VBE = 0.7V, VCE(sat) = 0.2V, Vcc= 12V, Rc= 2.7KN. la) Calculate the In and I.. Vcc RB Rc |b) Calculate Rp- B'
2.1) Design a BJT common-emitter amplifier (use the figure A or B in former page!) with a gain of 9. The Q point parameters should be IC = 3 mA and VCE = ŠV. A power supply of 20 V is available. Manufacturers' spec sheets give: min = 100, ht. = 200.Take VBE = 0.7 V. 2.2) Analyze the BJT circuit given in figure – 1. Determine the collector currents for DC current gains Boc = 100 and BDc = 200. Calculate the Q point of both cases. Detemine the percentage change in Ic (collector current), Vcz (collector-emitter current). Use the below formulas: I -I V -V CE -100) 100 d-200) -100) 100 : % Ic CE( -200) % Ic I (-100) Calculate the DC Load line of circuit. CE( -100) Voc-10" R2=1k2 R1=300k 10V Figure – 1
For the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQ
Common Gate MOSFET Amplifier has Select one: a. input is connected to the Gate and the output is taken from the Source b. input is connected to the Source and the output is taken from the Drain c. input is connected to the Gate and the output is taken from the Drain d. input is connected to the Source and the output is taken from the Gate 55 week 10 material Jump to... CE255/EE255 (01)- 16
The transistor in the shown figure has Br =150. 1) What is the type of this configuration ? 2) Draw the DC equivalent circuit for the given figure. 3) Calculate the Q- point, and sketch it in the de load line (output I-V). 4) Calculate the ontput ac voltage and sketch it. 5) In which region does the transistor operate ? why. What is the function of this circuit 6) Discuss the function of Cl and C2 in this circuit. VCC 10V VcC R4 R2 R1 C1 TuF R6 24.7k0 1uF 2N2222A 02 Vrms R3 10ka RS C2 2.