1. True or False 1) Band-to-band recombination is the dominant recombination mechanism of GaAs. (True or False) (True of False) 3) With a concentration gradient, electrons diffuse from the heavily to the lightly-doped region, leaving negatively (True or False) 2) For the band-to-band recombination, the band gap energy is dissipated as thermal energy charged donors behind.

Electric Motor Control
10th Edition
ISBN:9781133702818
Author:Herman
Publisher:Herman
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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True or False
1.
1) Band-to-band recombination is the dominant recombination mechanism of GaAs.
(True or False)
(True of False)
3) With a concentration gradient, electrons diffuse from the heavily to the lightly-doped region, leaving negatively
(True or False)
(True or False)
(True or False)
(True or False)
(True or False)
(True or False)
(True or False)
2) For the band-to-band recombination, the band gap energy is dissipated as thermal energy
charged donors behind.
4) R-G center is located near the center of the bandgap.
5) Si is a direct band gap semiconductor.
6) Quasi-Fermi level is applied to non-equilibrium condition.
7) Minority carrier diffusion equation is used when the voltage is applied on the device.
8) A diffusion gradient creates an electric field.
9) Low-level injection conditions prevail when An<<n, in an n-type material.
Δη
10) The continuity equation can be simplified to An
= D
An +G for the majority carrier. (True or False)
Transcribed Image Text:True or False 1. 1) Band-to-band recombination is the dominant recombination mechanism of GaAs. (True or False) (True of False) 3) With a concentration gradient, electrons diffuse from the heavily to the lightly-doped region, leaving negatively (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) 2) For the band-to-band recombination, the band gap energy is dissipated as thermal energy charged donors behind. 4) R-G center is located near the center of the bandgap. 5) Si is a direct band gap semiconductor. 6) Quasi-Fermi level is applied to non-equilibrium condition. 7) Minority carrier diffusion equation is used when the voltage is applied on the device. 8) A diffusion gradient creates an electric field. 9) Low-level injection conditions prevail when An<<n, in an n-type material. Δη 10) The continuity equation can be simplified to An = D An +G for the majority carrier. (True or False)
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