18. A MOSFET differs from a JFET mainly because (a) of the power rating (b) the MOSFET has two gates (c) the JFET has a pn junction (d) MOSFETS do not have a physical channel 19. A D-MOSFET operates in (a) the depletion mode only (b) the enhancement mode only (c) the ohmic region only (d) both the depletion and enhancement modes 20. An n-channel D-MOSFET with a positive VGs is operating in (a) the depletion mode (b) the enhancement mode (c) cutoff (d) saturation 21. A certain p-channel E-MOSFET has a VGsch) = -2 V. If VGS = 0 V, the drain current is (а) 0 А (b) ID(on) (c) maximum (d) Ipss 22. In an E-MOSFET, there is no drain current until VGS (a) reaches VGs(th) (b) is positive (c) is negative (d) equals 0 V 23. All MOS devices are subject to damage from (a) excessive heat (b) electrostatic discharge (c) excessive voltage (d) all of these 24. A certain D-MOSFET is biased at VGs 0 V. Its datasheet specifies Ipss = 20 mA and VGS(off) = -5 V. The value of the drain current (a) is 0 A (b) cannot be determined (c) is 20 mA 25. An IGBT is generally used in (a) low-power applications (b) rf applications (c) high-voltage applications (d) low-current applications
18. A MOSFET differs from a JFET mainly because (a) of the power rating (b) the MOSFET has two gates (c) the JFET has a pn junction (d) MOSFETS do not have a physical channel 19. A D-MOSFET operates in (a) the depletion mode only (b) the enhancement mode only (c) the ohmic region only (d) both the depletion and enhancement modes 20. An n-channel D-MOSFET with a positive VGs is operating in (a) the depletion mode (b) the enhancement mode (c) cutoff (d) saturation 21. A certain p-channel E-MOSFET has a VGsch) = -2 V. If VGS = 0 V, the drain current is (а) 0 А (b) ID(on) (c) maximum (d) Ipss 22. In an E-MOSFET, there is no drain current until VGS (a) reaches VGs(th) (b) is positive (c) is negative (d) equals 0 V 23. All MOS devices are subject to damage from (a) excessive heat (b) electrostatic discharge (c) excessive voltage (d) all of these 24. A certain D-MOSFET is biased at VGs 0 V. Its datasheet specifies Ipss = 20 mA and VGS(off) = -5 V. The value of the drain current (a) is 0 A (b) cannot be determined (c) is 20 mA 25. An IGBT is generally used in (a) low-power applications (b) rf applications (c) high-voltage applications (d) low-current applications
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
Related questions
Question
![18. A MOSFET differs from a JFET mainly because
(a) of the power rating
(b) the MOSFET has two gates
(c) the JFET has a pn junction
(d) MOSFETS do not have a physical channel
19. A D-MOSFET operates in
(a) the depletion mode only
(b) the enhancement mode only
(c) the ohmic region only
(d) both the depletion and enhancement modes
20. An n-channel D-MOSFET with a positive VGs is operating in
(a) the depletion mode
(b) the enhancement mode
(c) cutoff
(d) saturation
21. A certain p-channel E-MOSFET has a VGS(th) = -2 V. If VGS = 0 V, the drain current is
(a) 0 A
(b) ID(on)
(c) maximum
(d) Ipss
22. In an E-MOSFET, there is no drain current until VGs
(a) reaches VGS(th)
(b) is positive
(c) is negative
(d) equals 0 V
23. All MOS devices are subject to damage from
(a) excessive heat
(b) electrostatic discharge
(c) excessive voltage
(d) all of these
24. A certain D-MOSFET is biased at VGS = 0 V. Its datasheet specifies Ipss = 20 mA and
VGSloff = -5 V. The value of the drain current
(a) is 0 A
(b) cannot be determined
(c) is 20 mA
25. An IGBT is generally used in
(a) low-power applications
(b) rf applications
(c) high-voltage applications
(d) low-current applications](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F507699b4-520e-4e32-af09-cc0a82cb06be%2F711fe30a-47cc-4e5f-b393-456836ce2b81%2F7rpzbn_processed.jpeg&w=3840&q=75)
Transcribed Image Text:18. A MOSFET differs from a JFET mainly because
(a) of the power rating
(b) the MOSFET has two gates
(c) the JFET has a pn junction
(d) MOSFETS do not have a physical channel
19. A D-MOSFET operates in
(a) the depletion mode only
(b) the enhancement mode only
(c) the ohmic region only
(d) both the depletion and enhancement modes
20. An n-channel D-MOSFET with a positive VGs is operating in
(a) the depletion mode
(b) the enhancement mode
(c) cutoff
(d) saturation
21. A certain p-channel E-MOSFET has a VGS(th) = -2 V. If VGS = 0 V, the drain current is
(a) 0 A
(b) ID(on)
(c) maximum
(d) Ipss
22. In an E-MOSFET, there is no drain current until VGs
(a) reaches VGS(th)
(b) is positive
(c) is negative
(d) equals 0 V
23. All MOS devices are subject to damage from
(a) excessive heat
(b) electrostatic discharge
(c) excessive voltage
(d) all of these
24. A certain D-MOSFET is biased at VGS = 0 V. Its datasheet specifies Ipss = 20 mA and
VGSloff = -5 V. The value of the drain current
(a) is 0 A
(b) cannot be determined
(c) is 20 mA
25. An IGBT is generally used in
(a) low-power applications
(b) rf applications
(c) high-voltage applications
(d) low-current applications
Expert Solution
![](/static/compass_v2/shared-icons/check-mark.png)
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
This is a popular solution!
Trending now
This is a popular solution!
Step by step
Solved in 3 steps with 2 images
![Blurred answer](/static/compass_v2/solution-images/blurred-answer.jpg)
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Recommended textbooks for you
![Introductory Circuit Analysis (13th Edition)](https://www.bartleby.com/isbn_cover_images/9780133923605/9780133923605_smallCoverImage.gif)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
![Delmar's Standard Textbook Of Electricity](https://www.bartleby.com/isbn_cover_images/9781337900348/9781337900348_smallCoverImage.jpg)
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
![Programmable Logic Controllers](https://www.bartleby.com/isbn_cover_images/9780073373843/9780073373843_smallCoverImage.gif)
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
![Introductory Circuit Analysis (13th Edition)](https://www.bartleby.com/isbn_cover_images/9780133923605/9780133923605_smallCoverImage.gif)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
![Delmar's Standard Textbook Of Electricity](https://www.bartleby.com/isbn_cover_images/9781337900348/9781337900348_smallCoverImage.jpg)
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
![Programmable Logic Controllers](https://www.bartleby.com/isbn_cover_images/9780073373843/9780073373843_smallCoverImage.gif)
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
![Fundamentals of Electric Circuits](https://www.bartleby.com/isbn_cover_images/9780078028229/9780078028229_smallCoverImage.gif)
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
![Electric Circuits. (11th Edition)](https://www.bartleby.com/isbn_cover_images/9780134746968/9780134746968_smallCoverImage.gif)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
![Engineering Electromagnetics](https://www.bartleby.com/isbn_cover_images/9780078028151/9780078028151_smallCoverImage.gif)
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,