An article in the Journal of the Electrochemical Society (Vol. 139, No. 2, 1992, pp. 524–532) describes an experiment to investigate the low-pressure vapor deposition of polysilicon. The experiment was carried out in a large-capacity reactor at Sematech in Austin, Texas. The reactor has several wafer positions, and four of these positions are selected at random. The response variable is film thickness uniformity. Three replicates of the experiment were run, and the data are as follows: a. Test the significance of these wafer position with α=0.05. b. If proven significant, perform a multiple comparison method using Fisher’s LSD.

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An article in the Journal of the Electrochemical Society (Vol. 139, No. 2, 1992, pp. 524–532) describes an
experiment to investigate the low-pressure vapor deposition of polysilicon. The experiment was carried out
in a large-capacity reactor at Sematech in Austin, Texas. The reactor has several wafer positions, and four
of these positions are selected at random. The response variable is film thickness uniformity. Three
replicates of the experiment were run, and the data are as follows:
a. Test the significance of these wafer position with α=0.05.
b. If proven significant, perform a multiple comparison method using Fisher’s LSD.

Wafer Position
2
3
4
27.60
14.30
23.40
9.40
56.70
17.00
19.70
13.60
44.90
21.90
14.70
16.50
Transcribed Image Text:Wafer Position 2 3 4 27.60 14.30 23.40 9.40 56.70 17.00 19.70 13.60 44.90 21.90 14.70 16.50
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