Choose the correct answer: a) Which one of the following transistors cannot operate with VGs=0. 1. JFET. 2. D-MOSFET. 3. E-MOSFET. b) If the VGs in an n-channel D-MOSFET is made more negative, the drain current will. 1. Increase. 2. Decrease. 3. Be zero. c) A MOSFET differs from JFET mainly because: 1. MOSFETs do not have a physical channel. 2. The JFET has a pn junction. 3. of the power rating. d) The n-channel D-MOSFET with a positive Vas is operating in: 1. The depletion mode. 2. The enhancement mode. 3. Saturation.

Choose the correct answer: a) Which one of the following transistors cannot operate with VGs=0. 1. JFET. 2. D-MOSFET. 3. E-MOSFET. b) If the VGs in an n-channel D-MOSFET is made more negative, the drain current will. 1. Increase. 2. Decrease. 3. Be zero. c) A MOSFET differs from JFET mainly because: 1. MOSFETs do not have a physical channel. 2. The JFET has a pn junction. 3. of the power rating. d) The n-channel D-MOSFET with a positive Vas is operating in: 1. The depletion mode. 2. The enhancement mode. 3. Saturation.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

[2] What is threshold voltage for MOSFET? Derive the equation of Vt of MOSFET. V = Vto + Y V(2. Pp + |Vsbl) – /2. Pp %D
Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.
QUESTION 4 For an n-channel Junction Field-Effect Transistor (JFET), the gate-source cut-off voltage, VGS(OFF), is -4 V and the drain saturation current, Ipss is 50 mA. The drain current ID, is 12 mA. Determine the gate-to-source voltage, Vos, of the JFET.
State and explain the relation of drain current versus gate to source voltage for an MOSFET.
7. Although, geometrically no difference exists between the source and a drain of a MOSFET, drain and source terminals of a MOSFET are distinguished electrically. How are they distinguished in an nMOS transistor?
In your own words, briefly describe the difference between the basic operation of a p-channel depletion-type MOSFET and p-channel Enhancement-type MOSFET ?
3. Define Trans conductance and output drain resistance of MOSFET.
d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.
d) What is the difference between npn and pnp transistor? e) Draw the energy level diagrams of semiconductor, insulator and conductor. rding to physical laws f) Show and explain the amplification in AC domain.
Sketch the general current- voltage characteristics for both enhancement-mode and depletion-mode MOSFETs. Define the saturation and nonsaturation bias regions
Sketch the transfer and drain characteristics of an n - channel depletion type MOSFET with IDSS = 12 mA and VP = –8 V for a range of VGS = –VP to VGS = 1V. Show the details of your work.
Explain the working of N-channel enhancement MOSFET at gate to source voltage is increased.