Consider a silicon PN step junction diode with Nd = 1016 cm³ and N₁ = 5 × 1015 cm³. Assume T= 300 K. (a) Calculate the built-in potential bi (b) Calculate the depletion-layer width (W dep) and its length on the N side (xn) and P side (xp). (c) Calculate the maximum electric field. (d) Sketch the energy band diagram, electric potential, electric field distribution, and the space-charge profile. (e) Now let N₁ = 1018 cm³. Repeat (a), (b), and (c). Compare these to the previous results. How have the depletion widths changed?
Consider a silicon PN step junction diode with Nd = 1016 cm³ and N₁ = 5 × 1015 cm³. Assume T= 300 K. (a) Calculate the built-in potential bi (b) Calculate the depletion-layer width (W dep) and its length on the N side (xn) and P side (xp). (c) Calculate the maximum electric field. (d) Sketch the energy band diagram, electric potential, electric field distribution, and the space-charge profile. (e) Now let N₁ = 1018 cm³. Repeat (a), (b), and (c). Compare these to the previous results. How have the depletion widths changed?
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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a,b,c,d please
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