Q: At T=300K, the electron concentration of a semiconductor material isn, = 10" cm. The bandgap energy…
A: Given-Eg=1.1 eVNC=2.8×1019cm-3=2.8×1025 m-3Nv=1×1019cm-3=1×1025 m-3n0=1011 cm-3=1017m-3…
Q: 10. The capacitance of a Au-n-GaAs Schottky-barrier diode is given by the relation 1/C² = 1.57x1015…
A:
Q: Can we take one slab of p-type semiconductor and physically join it to another n-type semiconductor…
A:
Q: For p-type semiconductors, holes are predominant charge carriers. TRUE FALSE
A:
Q: Si and Ge have same lattice structure. Why is C insulator while Si and Ge intrinsic semiconductors?
A: The valence electron of three given elements are four but the energy gap value are different.
Q: Calculate the wavelength of radiation in (um) emitted by an LED made up of a semiconducting material…
A: The bandgap energy is given as E=1.87434×10-20 J
Q: is the maximum reverse voltage that a normal diode can withstand safely. b) Breakdown voltage L (d)…
A: Peak Inverse Voltage (PIV) or Peak Reverse Voltage (PRV) refer to the maximum voltage a diode or…
Q: Compare a point contact diode with a p-n junction.
A: A point contact diode is made when a metallic wire is attached by the N-type semiconductor with a…
Q: What is maximum power rating of p-n junction diode?
A: The maximum power rating of p-n junction diode is called maximum power of p-n junction diode to…
Q: Discuss the avalanche effect to diodes along with the depletion regions in forward and reverse bias.
A: The avalanche effect is also known as avalanche breakdown. It happens in a diode only when a high…
Q: The longest wavelength of radiation absorbed by a certain semiconductor is 0.512 μm. Calculate the…
A:
Q: Discuss the applications of Impurity defects in Semiconductors?
A: Pure semiconductors, also known as intrinsic semiconductors don’t actually conduct electricity. This…
Q: Explain why at high temperature, an extrinsic semiconductor behaves like an intrinsic semiconductor.
A: A small amount of a suitable impurity is added to the pure semiconductor; the conductivity of the…
Q: In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above.
A: We are authorized to answer one question at a time, since you have not mentioned which question you…
Q: When p-n junction diode is forward biased then Both the depletion region and barrier height are…
A: (A) both the depletion region and barrier height are reduced Because more recombination of electron…
Q: Find the static and dynamic resistance of a p-n germanium junction for an applied bias of 0.6V at…
A:
Q: PN-junction diode works as an insulator, when connected in?
A: When the PN junction diode is connected in reverse bias no current flows and works as an insulator.…
Q: A silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type…
A:
Q: äböi For the circuit shown below, calculate Vout if the saturation current for the * diode is 50nA,…
A:
Q: the intrinsic semiconductor conduct current well : O false true
A: To explain : Do intrinsic semi conductors conduct well ?
Q: A PN junction in series with a resistor of 100N and current of 100mA flows. If the voltage cross the…
A: GivenResistor(R)=100Ωcurrent(i)=100mAat t=0, the reverse current is fiows through the diodethe…
Q: Determine the saturation current in a p-n junction diode at 256 K if a voltage of 0.0678 V produces…
A: in above question we have to find saturation current , so we use p-n juction current equation in…
Q: What is the difference between an ordinary p-n junction diode and a zener diode?
A: The PN junction is a semiconductor diode with some depletion region. In case of Zener diode, the…
Q: Discuss PN junction diode and explain the barrier potential across the junction?
A: A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor…
Q: Estimate the band gap of the semiconductor in the infrared LED of a typical television remote…
A: The wavelength of the infrared waves lies between 700 nm to 1 mm. Assume that the wavelength used in…
Q: determine the saturation current in a p-n junction diode at 256 K if a voltage of 0.0678 V produces…
A: Given information: Here, T is the temperature, V is the forward voltage and I is the forward…
Q: What are the major differences between MOS and BJT transistors?
A: The major differences between MOS or MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and…
Q: The hall effect is much greater in semiconductor than in metal. Why? What practical results can we…
A: To determine the hall effect is much greater than semiconductors than in metal
Q: What is the difference between P-type and N- Type semiconductor?
A: P type semiconductor: 1. These are extrinsic semiconductors obtained by doping impurity atoms of…
Q: The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5…
A: Solution: (i) Calculate the base current. IB=VBB-VBERB Substitute 0.7V for VBE, 2.5V for VBB, 100kΩ…
Q: A crystal diode has O one pn junction O two pn junction O three pn junction O none of the above O…
A: Point contact diodes are another name for crystal diodes. This semiconductor device, also known as a…
Q: Determine the saturation current in a p-n junction diode at 256 K if a voltage of 0.0678 V produces…
A:
Q: Illustrate the biasing of an npn transistor in common emitter configuration in your own words.
A: Question--- explain NPN transistor in in common emitter configuration ?
Q: bandgap
A: The Fermi energy level in the semiconductor is the level above which the probability of finding an…
Q: Assume that a GaAs semiconductor has a lattice constant a=7.5 Å, and the atoms of Ga and As are hard…
A: Lattice constant for GaAs semiconductor (a) = 7.5 Ao
Q: How does the depletion region of a p-n junction diode get affected under reverse bias?
A: The p side stands for positive side, where the number of holes exceeds the number of electrons. The…
Discuss the forward and reverse biasing characteristics of PN Junction diode.
Step by step
Solved in 2 steps with 2 images
- Discuss PN junction diode and explain the barrier potential across the junction?The formula for the contact potential of a pn-junction diode is given by the formula: NaNa kT - In e a) This contact potential ensures that the net current across the junction is zero. Which side is higher in electron potential energy – the n or the p-side? Briefly explain your answer. b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage (V=0), there are two individual currents associated with electrons that add to zero (and two more associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and give their direction (for electrons). c) Which of the two types of current is independent of Aøo? Briefly explain why.Q/ A Germanium p-n junction diode has a reverse saturation current of 3.97 x 10-19A at room temperature. The diode is forward-biased with a voltage source of 1 V. Calculate the dynamic resistance of the Ge diode at room temperature.
- The formula for the contact potential of a pn-junction diode is given by the formula: KT In (NaNa a) This contact potential ensures that the net current across the junction is zero. Which side is higher in electron potential energy – the n or the p-side? Briefly explain your answer. b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage (V=0), there are two individual currents associated with electrons that add to zero (and two more associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and give their direction (for electrons). c) Which of the two types of current is independent of A¢o? Briefly explain why. d) Arguing from the formula above for A$o, give a conceptual reason for the fact that germanium (Ge) diodes have about half the contact potential compared to silicon (Si) diodes, all else being equal (same doping concentrations and temperature). For a photodiode (PV cell), would you choose Si or…Consider a simple pn-junction diode. Suppose this diode carries a current of 50 mA with a forward bias voltage of 200 mV at room temperature (293 K). What is the current when a reverse bias of 200 mV is applied?Discuss the operation of a diode in forward bias and reverse bias connections.
- Plot the I vs VD Forward bias characteristics of a PN Diode at room temperature by draw a graftand table of the graft. Given n=1 and Is= 10npA1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).Compare the IV- characteristics of a silicon diode with an Ohmic device (Resistor) to show that semiconductor diode is a nonlinear device. Make clear circuit diagram and IV-plot for both.
- = Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10Explain Avalanche breakdown mechanism responsible for breakdown in p-n junction diode.Shockley's diode equation in standard form may be considerably simplified for conditions of room temperature. Note that if the temperature (T) is assumed to be room temperature (25 degrees Celcius), there are three constants in the equation that are the same for all PN junctions: T, k, and q. The quantity [kT/q] is known as the thermal voltage of the junction. Calculate the value of this thermal voltage, given a room temperature of 25 degrees Celcius.