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Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer key and design rules can be found on the information sheet.

Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer key and design rules can be found on the information sheet.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer key and design rules can be found on the information sheet. P-WELL VTG VTL X A B ++++++++++ Onm 100 200 Figure 1: Circuit layout. Drawn to scale.
Transcribed Image Text:Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer key and design rules can be found on the information sheet. P-WELL VTG VTL X A B ++++++++++ Onm 100 200 Figure 1: Circuit layout. Drawn to scale.
(A) Draw the x-x' cross section.
Transcribed Image Text:(A) Draw the x-x' cross section.
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