E8(E)8, (E).Figure 2.14 General energy dependence of g, (E) and g, (E) near the band edges. g. (E) and g, (E)are the density of states in the conduction and valence bands, respectively.3.For some particular semiconductor, Eg=1.50 eV, mp*=10mn*, T=300 K andn₁=1x105 cm-³.a) Determine the position of the intrinsic Fermi energy level with respect to the centerof the bandgap.b) Impurity atoms are added so that the Fermi energy level is 0.45 eV below the centerof the bandgap. Are acceptor or donor atoms added?c) What is the concentration of the impurity atoms added?4. Pierret Problem 3.12 (a)-(f) for diagram P3.12 (b) and (e)3.12 Interpretation of Energy Band DiagramsSix different silicon samples maintained at 300 K are characterized by the energy banddiagrams in Fig. P3.12. Answer the questions that follow after choosing a specific diagramfor analysis. Possibly repeat using other energy band diagrams. (Excessive repetitions havebeen known to lead to the onset of insanity.)(a) Do equilibrium conditions prevail? How do youknow?(b) Sketch the electrostatic potential (V) inside the semiconductor as a function of x.(c) Sketch the electric field (8) inside the semiconductor as a function of x.(d) The carrier pictured on the diagram moves back and forth between x = 0 and x = Lwithout changing its total energy. Sketch the K.E. and P.E. of the carrier as a functionof position inside the semiconductor. Let E, be the energy reference level.-(e) Roughly sketch n and p versus x.On the same set of coordinates, make a rough sketch of the electron drift-current den-sity (JNlarik) and the electron diffusion-current density (JNidir) inside the Si sample asa function of position. Be sure to graph the proper polarity of the current densities atall points and clearly identify your two current components. Also briefly explain howyou arrived at your sketch.0Electron[J4EG4(b)3L/4EcEFLIn(e)LEE₁EFx

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Figure 2.14 General energy dependence of g, (E) and g, (E) near the band edges. g, (E) and g, (E) are the density of states in the conduction and valence bands, respectively. 3. For some particular semiconductor, Eg=1.50 eV, mp*=10mm*, T=300 K and n=1x10³ cm³. a) Determine the position of the intrinsic Fermi energy level with respect to the center of the bandgap. b) Impurity atoms are added so that the Fermi energy level is 0.45 eV below the center of the bandgap. Are acceptor or donor atoms added? c) What is the concentration of the impurity atoms added?

Figure 2.14 General energy dependence of g, (E) and g, (E) near the band edges. g, (E) and g, (E) are the density of states in the conduction and valence bands, respectively. 3. For some particular semiconductor, Eg=1.50 eV, mp=10mm, T=300 K and n=1x10³ cm³. a) Determine the position of the intrinsic Fermi energy level with respect to the center of the bandgap. b) Impurity atoms are added so that the Fermi energy level is 0.45 eV below the center of the bandgap. Are acceptor or donor atoms added? c) What is the concentration of the impurity atoms added?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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