Find the doping density in the n-side in unit of cm-8. Answers within 5% error will be considered correct. Enter answer here
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- How is a solid-state diode tested? Explain.The following circuit uses two Zener diodes with reverse breakdown voltage of 5.1 V for each. (1-a) Explain the operation of the Zener diode in forward and in reverse bias. (1-b) Analyze the circuit thoroughly assuming many source values that lead to all possible cases of diode states. For each case (Hint: 3 cases), re-plot the circuit and develop the relation between the output voltage and the source. (1-c) Draw input and output waveforms accurately over 0.5-ms period. Identify the diode states on the graph based on the categorization of cases from part (1-b). (1-d) Use Multisim to verify all of your results. Compare andcomment.Correct the mistake for the underlined phrase in each of the following 1. With forward bias to a p-n junction , the width of depletion layer remains the same 2. A p-type semiconductor material is doped with donor impurities . 3. When a pentavalent impurity is added to a pure semiconductor, it becomes an insulator 4. Addition of pentavalent impurity to a semiconductor creates many Bound electrons 5. A two-diode rectifier will not operate without a capacitive filter
- Considering a clamper circuit, where capacitance C, load R, the cut-in voltage of diode are unknown, which is the correct statement 1- the dc level of the signal changes 2- the peak-to-peak value of signal changes 3- the shape of signal changes 4- the dc level shifts up 5- the dc level shifts down3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.Lamount of current will flow through the p-n junction germanium diode for a forward bias of 0.15 V with reverse saturation current equal to 1.5 mA and voltage equivalent temperature value of 20.25 mV.
- Draw the characterstic r-l for silicon diode in the forward bais and explain it.In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below. (assume Si diodes) V_DC 0.75 0.25 V_SIN Y SIN as RL -1 v SOR V_SQR 0.75 -0.75 V_TRI V TRI as
- 5. For a silicon diode, the value of the forward-bias voltage typically (a) must be greater than 0.3 V (b) must be greater than 0.7 V (c) depends on the width of the depletion region (d) depends on the concentration of majority carriers 6. When forward-biased, a diode (a) blocks current (b) conducts current (c) has a high resistance (d) drops a large voltageDraw a circuit containing forward bias diode and then draw the graph I/N characteristic in silicon semiconductorIn the case of pn junction of the same material, the internal potential Vbi increases as more doping is performed in each of the p and n regions. Explain this by drawing an energy band diagram.