Find the resistivity of n-type silicon with ND = 10^15/cm3 at T=300K Assume that for intrinsic silicon un = 1350 cm2N.s and up = 480 cm2/V.s, and for the doped silicon un = 1100 cm2/N.s and up = 350 cm2N.s. O 17.86 Q.cm O 17.86 Q O 13.02 Q.cm O 5.68 Q.cm

Find the resistivity of n-type silicon with ND = 10^15/cm3 at T=300K Assume that for intrinsic silicon un = 1350 cm2N.s and up = 480 cm2/V.s, and for the doped silicon un = 1100 cm2/N.s and up = 350 cm2N.s. O 17.86 Q.cm O 17.86 Q O 13.02 Q.cm O 5.68 Q.cm

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Find the resistivity of n-type silicon with ND = 10A15/cm3 at T=30OK Assume that for intrinsic silicon un = 1350 cm2N.s and up = 480 cm2/V.s, and for the doped silicon un =
1100 cm2/N.s and up = 350 cm2/V.s.
O 17.86 Q.cm
O 17.86 Q
O 13.02 Q.cm
O 5.68 Q.cm

Consider an n-type silicon for which the dopant concentration Np= 1016/cm. Find the electron and hole concentrations at T=350 K.
electron = 1016/cm³ & holes= 17.22 ×
106 cm3
electron = 2.25 × 104/cm3 & holes= 2.25 x 104/cm3
electron = 17.22 × 100 /cm³ & holes= 1016/cm3
electron = 106/cm3 & holes= 1016 cm3

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