on junction at its limits
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- In a p+-n junction diode, if the minority carrier recombination rate is increased by 100 times, how will the diode current change (in magnitude)? (a) Only the forward current will increase. The reverse current will not change. (b) Only the reverse current will increase. The forward current will not change. (c) Both the forward and reverse current will increase. (d) Both the forward and reverse current will decrease. Solution: (c)Analyze the ON/OFF states of all diodes (D1 and D2) inthis circuit, using the ideal-diode model.• A Si diode at a temperature of 25°C has VD = 0.7V at Is = 10nA. The temperature is raised to 125°C. 1. Calculate ID at 25°C. 2. What is effect of rise in temperature on VD & IS 3. Calculate ID at 125°C.
- For the diode circuits shown below, find the values of I1, I2 and V indicated. a) Using the constant-voltage-drop model (VD=0.7V):In a Simplified Diode Model, up to the barrier potential or Vdiode the current through the diode is increasing. Select one: True FalseExplain the V-I characteristics of a P-N junction diode when it is connected in forward bias and reverse bias. A PN junction diode gives a current of 50 mA at a room temperature of 20 dergee C when the forward bias voltage is 200mV. Determine (a) the saturation current with a negative bias (b) the diode current when room temperature is 30 degree C , and (c) diode current at a forward bias voltage.
- For the subsequent questions, please refer to the circuit below. Assume that the diode is ideal (e.g. the voltage across it is zero volts when it is ON) IK VIN=7V = J Syt + Jo Vo Suppose we assume the diode is ON, this is a wrong assumption because when we solve for lo with the diode as a short-circuit the condition ID>=0 will NOT hold as lp will be (in mA) ... Suppose we assume the diode is OFF, what is the resistor current I in mA? Suppose we assume the diode is OFF, what is Vo in volts? Suppose we assume the diode is OFF, our assumption is correct because the condition VD<=0 will hold as Vp will be (in volts) ...Consider the diode circuit shown below. If in the given circuit, Vs is replaced by a 12V battery and diodes D1 & D2 are considered ideal, what is the potential Vout equal to?3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.
- For a selicon p -n junction diode (i) For what value of reverse voltage will the reverse current reach 90% of its saturation value at a room temperature.(ii)Find the ratio of current for a forward bias of 0.2 V to the reverse saturation current for the same magnitude of reverse bias voltage.A diode is doped with NA=1018/cm3 on the p-type side and ND=1018/cm3 on the n-type side. (a) What are the values of pp, pn, np, and nn? (b) What are the depletion-region width wdo and built-in voltage?Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE