Q3 Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 1016 cm-3 and donor doping concentrations of 1015 cm-3. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n = 1.5 x 1010 cm %3D Es = 1.035 x 10-12F/cm
Q3 Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 1016 cm-3 and donor doping concentrations of 1015 cm-3. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n = 1.5 x 1010 cm %3D Es = 1.035 x 10-12F/cm
Glencoe Physics: Principles and Problems, Student Edition
1st Edition
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Paul W. Zitzewitz
Chapter29: Solid-state Electronics
Section29.1: Conduction In Solids
Problem 17PP
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