Significance of your results: Titanium is also commonly anodized, but does not need to be dyed to achieve colored surface layers. Instead, the color comes from thin-film refraction within the oxide layer - the color is characteristic of the thickness of the oxide layer. Ti²+ (aq) + 2e-Ti (s) E° = -1.60 V TiO₂ (s) + 4 H+ (aq) + 4 e− = Ti (s) + H₂0 (1) a. What is the half-reaction at the anode for the anodization of titanium? E° = -1.076 V b. Under standard conditions, what is the smallest potential you would need to provide in order to anodize titanium?

Significance of your results: Titanium is also commonly anodized, but does not need to be dyed to achieve colored surface layers. Instead, the color comes from thin-film refraction within the oxide layer - the color is characteristic of the thickness of the oxide layer. Ti²+ (aq) + 2e-Ti (s) E° = -1.60 V TiO₂ (s) + 4 H+ (aq) + 4 e− = Ti (s) + H₂0 (1) a. What is the half-reaction at the anode for the anodization of titanium? E° = -1.076 V b. Under standard conditions, what is the smallest potential you would need to provide in order to anodize titanium?

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

See similar textbooks

Similar questions

Ksp for Co(OH)2 is 5.92x10^-15
Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use ni = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10!º cm³) and NA = 0 (use n¡ = 1010 ; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) cm (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x1012 cm³), it is found that po = 4no and that Nd = 0. Determine po, no, and Na. (e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K: Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x1031 K*.cm3 (1.12eV) and B = 2.31x1030 K³.cm³ (0.66€V).
Which of the following pairs have the same value of magnetic moment a-Ni*2,Ti b- Fe,Sc - Fe,Mn+2 d- Cu",Co
Tron can be extracted from haematite, Fe,Oa, using either C or CO2 as the reducing agent. The reactions are shown below. AH = +492.7 kJ /mol %3D Fe2O3(s) + 3 C(s) → 2 Fe(s) + 3 CO(g) AH = - 24.8 kJ/mol Fe2O3(s) + 3 CO(g) → 2 Fe(s) + 3 CO2(g) Substance S° (J/ K•mol) Fe2O3 (s) 87.4 Fe (s) 27.3 C (s) 5.7 CO (g) 197.6 CO2 (g) 213.6 Use available data given to: 1. Calculate the minimum temperature at which reduction with carbon is feasible 446
You have the following equation for the binding energy of donor atom on the impurity atom: 13.6 m* E K² mo E= binding energy in eV. K = Dielectric constant of the semiconductor. m*= effective mass, mo = mass of an e-. For example, if K =1 and m* =1, then the binding energy would be 13.6 eV. If the dielectric constant of Si is 11.7, and binding energy of Sb donor is 0.039 eV and that of As donor is 0.054 eV, compute the effective mass (m*/mo in this notation), of the e- at the donor site Sb in Si and the e- at the donor site of As in Si.
Copper is produced from chalcopyrite concentrate from a mixed type ore containing 1.2% CuFeS2 (chalcopyrite) and 6% Cu3 (CO3) 2 (OH) 2 (azurite) by sulfating roasting leaching method. 4 tons of chalcopyrite concentrate is roasted daily. If it is assumed that the amount of iron in the solution is 20% under the same conditions, how much copper is produced in 1 day?
Nb has Tc = 9.5 K and Hc(0) = 158 kA m−1. Calculate the highest magnetic field at which superconductivity can be maintained at 6 K.
To determine the amount of magnetite. Fe3O4, in an impure ore, a 1.5419 g sample is dissolved in concentrated HCl, resulting in a mixture of Fe2+ and Fe3+. After adding HNO3 to oxidize Fe2+ to Fe3+ and diluting with water, Fe3+ is precipitated as Fe(OH)3 using NH3. Filtering, rinsing and igniting the ppt provides 0.8525 g of pure Fe2O3. Calculate % Fe in the sample.
State whether the following statement is ‘True’ or ‘False’. (2 × 10 = 20) Give a brief explanation for each of your answers, as applicable. Alpha-Polonium has a body-centered cubic structure. True False A dislocation loop must always be a mixed dislocation. True False Divacancies in any metal are present at much higher concentration than monovacancies. True False Generally, a quenched metal has a higher electrical resistivity than an annealed metal. True False Shockley partials are considered glissile in nature. True False Wider stacking faults make cross-slip more difficult, that is why cross-slip in brass (Cu-Zn) is more difficult than copper (Cu). True False According to Hume-Rothery’s rule, the solvent and solute in a substitutional solid solution must have 5% size difference. Pearson symbol of copper cP2. True False Frank partial is a sessile dislocation. True False Edge dislocations can cross-slip to move to other slip planes. True False
Cr(s) salt bridge -Zn(s) 2.50 M 0.20 M Zn(NO3)2 Cr(NO3)3 Cr³+ (aq) + 3e →Cr (s) Eºred= - 0,740 V Zn²+ (aq) + 2e → Zn (s) Eºred= - 0,763 V R = 8,314 J mol-¹ K-1 dan = 9,650* 104 J/Volt mol e Under standard conditions (250 C, 1.0 atm): i. If Cr metal is immersed in a solution of Zn(NO3)2, will the Cr metal be/can be oxidized? ii. Calculate the standard cell potential (in V) at 250C for a Galvanic cell prepared with a Cr electrode in a Cr(NO3)3 solution and a Zn electrode in a Zn(NO3)2 solution. iii. Write the reaction and the cell notation jv. Calculate the equilibrium constant
Determine the formula of the oxide of Selenium in the +4 oxidation state (Se+4). Next, determine the number of vacant coordination sites on Se+4 in this oxide. The ionic radius of the oxide is 126pm. Show your work.
The iron content of a large lump of ore is determined by taking a single small sample, dissolving it in acid, and titrating with ceric sulphate after reduction of Fe (III) to Fe (II). What are the possible source of random and systematic errors?