The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight  (TOF) photoconductivity measurement. Fig.1(a) is a schematic diagram of the TOF set-up,  and Fig.1 (b) is the typical TOF transient measured for a 10 μm thick NPB film sandwiched  between an ultrathin Al cathode and an ITO anode. From the constant current plateau in the  TOF measurement, as shown in Fig.1(b), the transit time thus obtained for the NPB sample is  9 μs.  (a) Calculate the carrier mobility in NPB layer.  (b) Explain what type of the carriers, i.e., hole or electron mobility, was measured in the  experiment.

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The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight 
(TOF) photoconductivity measurement. Fig.1(a) is a schematic diagram of the TOF set-up, 
and Fig.1 (b) is the typical TOF transient measured for a 10 μm thick NPB film sandwiched 
between an ultrathin Al cathode and an ITO anode. From the constant current plateau in the 
TOF measurement, as shown in Fig.1(b), the transit time thus obtained for the NPB sample is 
9 μs. 

(a) Calculate the carrier mobility in NPB layer. 
(b) Explain what type of the carriers, i.e., hole or electron mobility, was measured in the 
experiment. 

 

 

Al (15nm)
ITO
10
Laser
NPB
→ Oscilloscop
d
200 V
10
20
30
Time(us)
Fig.1 (a)
Fig.1 (b)
Photocurrent(µA)
Transcribed Image Text:Al (15nm) ITO 10 Laser NPB → Oscilloscop d 200 V 10 20 30 Time(us) Fig.1 (a) Fig.1 (b) Photocurrent(µA)
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