The velocity of electrons in an intrinsic silicon material is 80 m/s at a certain temperature. The silicon whose length is 5 cm is subjected to an electric field of 10 volts. Determine the mobility of the electrons in the silicon
The velocity of electrons in an intrinsic silicon material is 80 m/s at a certain temperature. The silicon whose length is 5 cm is subjected to an electric field of 10 volts. Determine the mobility of the electrons in the silicon
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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The velocity of electrons in an intrinsic silicon material is 80 m/s at a certain temperature. The silicon whose length is 5 cm is subjected to an electric field of 10 volts. Determine the mobility of the electrons in the silicon.
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