Q2: Complete the following: 1. Freeze-out pheromone is. 2. A compensated semiconductor can be formed by 3. If Germanium material (n = 24 x 103 cm) was doped by 106 cm3 of phosphorous atoms and 10cmof Indium, then, the electron concentration is) 4. each donor level has two quantum states, due to 5. The generation carriers' process in semiconductors is caused by and...

Q2: Complete the following: 1. Freeze-out pheromone is. 2. A compensated semiconductor can be formed by 3. If Germanium material (n = 24 x 103 cm) was doped by 106 cm3 of phosphorous atoms and 10cmof Indium, then, the electron concentration is) 4. each donor level has two quantum states, due to 5. The generation carriers' process in semiconductors is caused by and...

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Which of the (110) type directions lie in the (112) plane? OA. [110] and [110] OB. [101] and [101] OC. [011] and and [101] OD.[110] and [110] OE. [110] and [101] QUESTION 30 The lattice constant of the unit cell of a-iron (has a bcc structure) is 0.287 nm. The number of atoms/mm2 (atoms per unit area) for the (111) plane is: OA. 9.86 X 10° atoms/mm² OB. 48.56 X 10° atoms/mm² OC. 0.96 X 10¹3 atoms/mm² OD. 22.11 X 10¹3 atoms/mm² 2 po
1.Why would doping a piece of silicon change its bulk magnetic susceptibility? Now what happens if we vary the temperature? 2. Electrons are placed into orbitals to form configuration, each of which can be labeled by its symmetry. Is configurations may "interact" strongly if they have similar energies?
3. How many electrons in one bit? Do an order of magnitude estimate of a transistor (say, 5nm long gate, 10nm deep into the silicon, 1um wide. See the illustration above) You may assume each silicon atom contributes one electron.
Q6. Can we operate normal PN junction diode in breakdown region for longer duration? Give reason
1. Determine the diode current (in Ampere) at 60°C for a silicon diode with reverse saturation current of 60 nanoAmpere and an applied forward bias of 0.6 volts. a. The value of k is (put values only) b. The temperature in Kelvin is (put values only, put up to 2 decimal places) c. The diode current (in Ampere) is : (put values only, put up to 6 decimal places)
1. Draw the three (3) Equivalent Circuit of a Diode. 2. Determine the diode current (in Ampere) at 20°C for a silicon diode with reverse saturation current of 70 nanoAmpere and an applied forward bias of 0.6 volts. The constant k value is: The Temperature (in Kelvin) is: The Diode current (in Ampere) is:
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Please answer and explain to these in not less than 3 sentences. Thank you! 1. How can a sheet of copper be made to emit electrons thermionically? 2. Why do electrons cross the gap in a vacuum tube? 3. Besides tungsten, what other materials are used for cathodes in vacuum tubes? 4. What is the advantage of directly heated cathodes?
5. Describe qualitatively the physical origin of electronic energy bands in solids! a. Show that the spatial probability to find an electron in a Bloch state has the same periodicity as the lattice. b. Show, in one dimension, that the average velocity of Bloch electrons in a band is zero! c. Consider a one dimensional band of the form E(k)= -U cos(kd). Calculate the velocity and effective mass for all k. Consider an electron in this band which is subjected to a constant electric field E. Calculate its position as a function of time, neglecting scattering (the surprising result is called Bloch oscillations and can actually be observed in semiconductor superlattices and ultracold atoms) d. How many electrons fit into one band assuming spin degeneracy? e. Are ionic solids good or bad conductors? Why?
2. In n-channel n"-polycrystalline Si-SiO2-Si MOS transistor N, = 2 x 1016 cm, Qavq = 2 x 10!! cm?, the oxide layer thickness is 50 nm. (1) What is the flat-band voltage, VFB, of the MOSFET? (2) What is the threshold voltage, Vr, of this transistor?
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