Consider the output stage of the 741 op−amp shown in Figure 13.8. Assume
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Microelectronics: Circuit Analysis and Design
- The arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. that it is a P-channel MOSFET Oc. the direction of electrons O d. the direction of conventional current flowarrow_forwardSketch the de load line, quiescent collector current, quiescent voltsge, input power, output power and maximum efficiency of the circuit shown an Figure. The input results in a base current of 5 mA peak to peak What maximum output power can be delivered by the circuit, if the input voltage is changed resulting in a base current of 10mA peak to peak and hence find the maximum etficiency. cc=15 V R =18 2 -25arrow_forwardDetermine VB, VE, VC, VCE, IB, IE, and IC in Figure. The 2N3904 is a general purpose transistor with a typical BDC 200 Vcc +30 V WWII VCE VB R₁ • 22 ΚΩ IC(mA) Chọn... * Chọn... * IB(UA) Chọn... * IE(MA) Chọn... ◆ Chọn... * Chọn... * Chọn... * VE VC R₂ ´ 10 ΚΩ www Rc 1.0 ΚΩ 2N3904 PDC=200 RE 1.0 ΚΩarrow_forward
- Q23 For the circuit shown in Figure B23, a 0.96. calculate the following: Collector current (Ic) Collector-Base voltage (VCB) iii. Emitter Current (Ig) iv. Base Current (IB) Ic 2 2.5 kQ Output 4V 1B 14V Ncc EEarrow_forwardThe arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. the direction of conventional current flow O c. that it is a P-channel MOSFET O d. the direction of electronsarrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forward
- = Assume Vcc = 18V, L₁= 5nH, C3 = 1000pF, total current drain of 1.5mA, V, 15Vp-p, Q = 100 Vin C₁₂ R₁₂ 10 ΚΩ Vcc RL · 10 ΚΩ 1. If Vin = 2V RMS: a. Calculate the peak-to-peak input voltage at the base. b. Calculate the DC voltage measured at the base. c. Draw the AC voltage at the base as it would be seen on the oscilloscope with appropriate detail.arrow_forwardcircuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2arrow_forwardQ-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2arrow_forward
- Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardAn NPN silicon transistor having a nominal ß of 100 is to be used in a CE configuration with Vcc= 15 V. The Q point is to be Ic = 4mA and VcE = 12V . Now design the circuit diagram.arrow_forwardThis graphical solution represents IDss Q-point VGS VP VGG Select one: A. self bias for an n-channel JFET B. fixed-bias configuration for an n-channel JFET. C. voltage-divider bias for an n-channel JFET D. None of the abovearrow_forward
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