Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
expand_more
expand_more
format_list_bulleted
Question
Chapter 37, Problem 43P
(a)
To determine
The relation between
(b)
To determine
The dissociation energy of NaCl.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
(Electroplating)
A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s.
V = CIt
V = ECIt
d =
V
A
Typical cathode efficiencies in electroplating and values of plating constant C.
Compiled from [18].
Plate Metal Electrolyte
Cadmium (2) Cyanide
Chromium (3) Chromium-acid-sulfate
Copper (1)
Gold (1)
Nickel (2)
Silver (1)
Tin (4)
Zinc (2)
Cyanide
Cyanide
Acid sulfate
Cyanide
Acid sulfate
Chloride
Plating Constant ca
Cathode Efficiency % mm³/amp-s (in³/amp-min)
6.73 × 10-²
(2.47 × 10-4)
X
2.50 × 10-2
(0.92 × 10-4)
7.35 x 10-2
10.6 x 10-²
3.42 x 10-2
(2.69 × 10-4)
(3.87 × 10-4)
(1.25 × 10-4)
10.7 x 10-2
(3.90 × 10-4)
4.21 x 10-2
(1.54 × 10-4)
4.75 × 10-2
(1.74 x 10-4)
90
15
98
80
95
100
90
95
¹Most common valence given in parentheses (); this is the value assumed in determining…
(a): Calculate Miller's indices in the hexagonal structure of its
intersections. ai = 1, ar--1/2, as = 1,c= o and draw it.
(b): the potential energy of a diatomic molecule is given by U =
A B
. where A and B are constants and r is the separation
distance between the atoms. For the H2 molecule, take A = 0.124
x 10-120 eV. m2 and B = 1.488 x 10 eV.m. Find the
separation distance at which the energy of the molecule is a
minimum.
Q3: Calculate the dhai of tetragonal using the concepts of
reciprocal lattice
In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
Chapter 37 Solutions
Physics for Scientists and Engineers
Ch. 37 - Prob. 1PCh. 37 - Prob. 2PCh. 37 - Prob. 3PCh. 37 - Prob. 4PCh. 37 - Prob. 5PCh. 37 - Prob. 6PCh. 37 - Prob. 7PCh. 37 - Prob. 8PCh. 37 - Prob. 9PCh. 37 - Prob. 10P
Ch. 37 - Prob. 11PCh. 37 - Prob. 12PCh. 37 - Prob. 13PCh. 37 - Prob. 14PCh. 37 - Prob. 15PCh. 37 - Prob. 16PCh. 37 - Prob. 17PCh. 37 - Prob. 18PCh. 37 - Prob. 19PCh. 37 - Prob. 20PCh. 37 - Prob. 21PCh. 37 - Prob. 22PCh. 37 - Prob. 23PCh. 37 - Prob. 24PCh. 37 - Prob. 25PCh. 37 - Prob. 26PCh. 37 - Prob. 27PCh. 37 - Prob. 28PCh. 37 - Prob. 29PCh. 37 - Prob. 30PCh. 37 - Prob. 31PCh. 37 - Prob. 32PCh. 37 - Prob. 33PCh. 37 - Prob. 34PCh. 37 - Prob. 35PCh. 37 - Prob. 36PCh. 37 - Prob. 37PCh. 37 - Prob. 38PCh. 37 - Prob. 39PCh. 37 - Prob. 40PCh. 37 - Prob. 41PCh. 37 - Prob. 42PCh. 37 - Prob. 43P
Knowledge Booster
Similar questions
- Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 × 1017 cm-3 and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for donors is 0.0058 eV. The fraction of total electron that are still in the donor states?arrow_forward
- Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardGrüneisen parameter for silicon The silicon crystal (diamond structure) has the following properties at 500 K. The lattice parameter (a) = 0.5440 nm, thermal expansion coefficient (a) = 3.6x106 K-', and the bulk modulus is about the same as that at room temperature (K = 99 GPa). The Debye temperature of Si is 625 K. At room temperature (300 K) its density is 2.33 g cm³, and its lattice constant is 0.5430 nm. Calculate the Grüneisen parameter at 500 K and compare with its value at room temperature in Table 1. Is 3 constant?arrow_forward
- The potential energy of a system of two atoms is given by the relation U =-A/r + B/r10 A stable molecule is formed with the release of 8 eV energy when the interatomic distance is 2.8 Å. Find A and B and the force needed to dissociate this molecule into atoms and the interatomic distance at which the dissociation occurs.arrow_forwardQ3/ An experiment was conducted to find the relationship between the specific heat of potassium metal and the temperature, and it was found that this relationship takes the following formula at low temperatures 2.08 +2.57 T2 What is the value of each of: (1) the fermi temperature of potassium? (b) Debye temperature of potassium? Note that specific heat is measured in units of mj / mol / K.arrow_forwardThe expression for the second overtone frequency in the vibrational absorption spectra of a diatomic molecule in terms of the harmonic frequency w. and anharmonicity constant x, is (A) 2w.(1 – xe) (B) 2w.(1 – 3x,) (C) 3w.(1– 2xe) (D) 3w.(1 – 4x.)arrow_forward
- Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.arrow_forwardA) Calculate the highest linear density (atoms/m) encountered in Vanadium (V)?B) For Vanadium, calculate the planar density value for the (100) plane?Vanadyum has BBC unit cell. Its atomic weigth and density are 50.94 g/mol and 5.8 g/cm3,respectively.arrow_forwardQ#04. (a) Calculate the number of atoms per unit area in (100), (110) and (111) planes of in bcc crystal with the lattice parameter of 2.5 angstrom.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- College PhysicsPhysicsISBN:9781305952300Author:Raymond A. Serway, Chris VuillePublisher:Cengage LearningUniversity Physics (14th Edition)PhysicsISBN:9780133969290Author:Hugh D. Young, Roger A. FreedmanPublisher:PEARSONIntroduction To Quantum MechanicsPhysicsISBN:9781107189638Author:Griffiths, David J., Schroeter, Darrell F.Publisher:Cambridge University Press
- Physics for Scientists and EngineersPhysicsISBN:9781337553278Author:Raymond A. Serway, John W. JewettPublisher:Cengage LearningLecture- Tutorials for Introductory AstronomyPhysicsISBN:9780321820464Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina BrissendenPublisher:Addison-WesleyCollege Physics: A Strategic Approach (4th Editio...PhysicsISBN:9780134609034Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart FieldPublisher:PEARSON
College Physics
Physics
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
University Physics (14th Edition)
Physics
ISBN:9780133969290
Author:Hugh D. Young, Roger A. Freedman
Publisher:PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:9781107189638
Author:Griffiths, David J., Schroeter, Darrell F.
Publisher:Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:9781337553278
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:9780321820464
Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...
Physics
ISBN:9780134609034
Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:PEARSON