Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
9th Edition
ISBN: 9781259989452
Author: Hayt
Publisher: Mcgraw Hill Publishers
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Chapter 12, Problem 2E
(a)
To determine
The gate to source voltage and the drain to ground voltage.
(b)
To determine
The power lost at the gate-source terminal.
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Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain-
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necessary example any consequences that will happen for any condition of MOSFET.
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5.5 V-
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3
Vos [V]
Figure 1
lo [A]
Diode-connected MOSFET: The configuration shown below, an n-MOSFET with its drain and gate terminals connected together, is called a diode-connected MOSFET.
Q1: for a silicon transistor in the figure below = 200 dc {What is the voltage between the collector and emitter VCE, drawing the load line and finding the Q point
Chapter 12 Solutions
Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
Ch. 12.1 - Let and . Find (a) Vad; (b) Vbc; (c) Vcd.Ch. 12.2 - Prob. 2PCh. 12.2 - Modify Fig. 12.9 by adding a 1.5 resistance to...Ch. 12.3 - A balanced three-phase three-wire system has a...Ch. 12.3 - A balanced three-phase three-wire system has a...Ch. 12.3 - Three balanced Y-connected loads are installed on...Ch. 12.4 - Each phase of a balanced three-phase -connected...Ch. 12.4 - Prob. 8PCh. 12.5 - Determine the wattmeter reading in Fig. 12.24,...Ch. 12.5 - Prob. 10P
Ch. 12 - Prob. 1ECh. 12 - Prob. 2ECh. 12 - Prob. 3ECh. 12 - Describe what is meant by a polyphase source,...Ch. 12 - Prob. 5ECh. 12 - Prob. 6ECh. 12 - Prob. 7ECh. 12 - Prob. 8ECh. 12 - Prob. 9ECh. 12 - Prob. 10ECh. 12 - The single-phase three-wire system of Fig. 12.31...Ch. 12 - Prob. 12ECh. 12 - Referring to the balanced load represented in Fig....Ch. 12 - Prob. 14ECh. 12 - Prob. 15ECh. 12 - Consider a simple positive phase sequence,...Ch. 12 - Assume the system shown in Fig. 12.34 is balanced,...Ch. 12 - Repeat Exercise 17 with Rw = 10 , and verify your...Ch. 12 - Prob. 19ECh. 12 - Prob. 20ECh. 12 - Prob. 21ECh. 12 - Prob. 22ECh. 12 - A three-phase system is constructed from a...Ch. 12 - Prob. 24ECh. 12 - Each load in the circuit of Fig. 12.34 is composed...Ch. 12 - Prob. 26ECh. 12 - Prob. 27ECh. 12 - A three-phase load is to be powered by a...Ch. 12 - For the two situations described in Exercise 28,...Ch. 12 - Prob. 30ECh. 12 - Prob. 31ECh. 12 - Prob. 32ECh. 12 - Repeat Exercise 32 if Rw = 1 . Verify your...Ch. 12 - Prob. 34ECh. 12 - Prob. 35ECh. 12 - Prob. 36ECh. 12 - A wattmeter is connected into the circuit of Fig....Ch. 12 - Find the reading of the wattmeter connected in the...Ch. 12 - (a) Find both wattmeter readings in Fig. 12.39 if...Ch. 12 - Circuit values for Fig. 12.40 are , , , , . Find...Ch. 12 - Prob. 41ECh. 12 - Prob. 42ECh. 12 - (a) Is the load represented in Fig. 12.41...Ch. 12 - Prob. 44E
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- 2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0arrow_forwardFor the common base connection of an npn silicon transistor, supply at emitter is 10 V and emitter resistance is 2.5 kΩ. The supply at collector side is 25 V and collector resistance is 2 kΩ. Draw the DC load line and find out the operating points. Draw the circuit. ..arrow_forwardWhat is the preferred D-MOSFET biasing method? O a. Drain-to-source voltage is zero O b. VGS= 0. O c. Apply source voltage to gate O d. Hold gate-to-source at AC input levelsarrow_forward
- Q-3-B: If VRE =- 0.7 V and VCg 0.8 V for Si PnP transistor. Where does the transistor operating in? Prove your answer.arrow_forwardDetermine vo versus v₁ for the circuit shown in Figure 2. Assume that the MOSFET operates in saturation and is characterized by the parameters K and VT. Vs R₁ www Figure 2 wwww RL R₂ wwwww VO Note: assuming the MOSFET works at normal saturation regime and ips= (VDS -VT)²2 K 2arrow_forward6. The MOSFET in the circuit shown has V₁ = 1.5 and k = 100 mA/V². a. Determine the drain current. b. Determine the voltage Vx at node X. 5V 10k 5V 1k X 50arrow_forward
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