Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.11P
To determine
The value of
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3Q1:For the circuit on the right,a. Graph the output voltage v0 against the input voltage v1.Assume ideal diodes.b. Describe the behaviour of D1 in terms ofsemiconductor behaviour.Q2: For the circuit shown in Figure 1:1. Describe the behaviour of a p-n junction in terms of semiconductor behaviour.2. Describe and evaluate the circuit. Assume the values for the parameters in the circuit.You should critically evaluate the performance of the circuit and suggest potential applications.Q3: For the circuit shown in Figure 2, find the following:1. Describe the function of the circuit in terms of simple of semiconductor behavior.2. Evaluate the output voltage vo, assuming vs is 10 Sine (200t) mV, RE1 =100 Ω,and RE2 =900 Ω. The bypass capacitor (CE) is in parallel with RE2.3. Simulate the circuit and verify your answers; you should show the input voltage.and output voltage on the same graph.4. You should explain the characteristics of the amplifier.
3.14. For the following circuit, assuming the diode is ideal, find the steady state values for
Vour the voltage across and current into the capacitor, and the current through the
output resistor for
V, = 10 V DC
b. V, = -10 V DC
in
R
Vout
V,
R = 2R
Q3://: In the d.c. electrical conductivity the charge carriers in semiconductors needs an
activation energy E, to contribute in the electrical conductivity, discuss it briefly and
state the mechanism of the electronic transition in the d.c. conduction with resnect to
the temperature and density of states distribution.
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Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Analyse the voltage waveforms of the input, V; and the output, V, for a clamper circuit shown in Figure Q3(b)(i) and Figure Q3(b)(ii). Based on your understanding in electronic device field, develop a clamper circuit by referring to the input waveform, Vi and the output waveform, Vo given. Use ideal diode. Then, prove the value of V. (for positive cycle and negative cycle) by calculation technique. V. V. 10 V 3 V -10 -17 (i) (ii) Figure Q3(b)arrow_forwardWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to add impurity increase the resistivity apply heat None of the themarrow_forwardWhen a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.arrow_forward
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- a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.arrow_forwardConsider the following diode circuit. 1kQ Vs 10 Vs VD t(ns) 10 -5 i. Calculate the current at t=0* in the circuit. ii. Calculate lş and IR when the diode is switched off at t=10 ns. Assume Von=0.7 V. i. Write the type of capacitances in a diode.arrow_forwardA. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.arrow_forward
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