Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.5, Problem 3.13E
To determine

The width of the depletion region, charge stored corresponding to the 2V reverse-bias voltage and reverse current.

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A p-type semiconductor  joined to an n-type semiconductor  ... Pick those that apply.     Will not allow current to flow in either direction.     Has electron current flowing from the n-type to the p-type material     Makes a diode     Allows positive current flow from the p-type to the n-type material
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
(1) Describe the behaviour of a p-n junction under forward and reverse biasing in terms of semiconductor behaviour and sketch the V-I Characteristics of a p-n Junction.
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Diodes Explained - The basics how diodes work working principle pn junction; Author: The Engineering Mindset;https://www.youtube.com/watch?v=Fwj_d3uO5g8;License: Standard Youtube License