Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.5, Problem 3.13E
To determine
The width of the depletion region, charge stored corresponding to the
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A p-type semiconductor joined to an n-type semiconductor ...
Pick those that apply.
Will not allow current to flow in either direction.
Has electron current flowing from the n-type to the p-type material
Makes a diode
Allows positive current flow from the p-type to the n-type material
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE.
i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow.
ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction.
iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction.
iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction.
v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction.
vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor.
Which of the following statements is correct:
(i) and (ii) are both FALSE
(ii) and (v) are both FALSE
(iii) and (vi) are both FALSE
(1)
Describe the behaviour of a p-n junction under forward and reverse
biasing in terms of semiconductor behaviour and sketch the V-I
Characteristics of a p-n Junction.
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Name the majority carrier in an n-type and p-type extrinsic semiconductor. Briefly explain the behavior of the carriers during the formation of the P-N junction and their relation to the depletion region appears in the junction. (c)arrow_forward9. A pn junction is formed by: a. b. C. b. the boundary of a p-type and an n-type material d. the collision of a proton and neutron 2. The term "bias" means" the recombination of electrons and holes ionization the ratio of majority carriers to minority carriers the amount of current across a diode a DC voltage is applied to control the operation of a device none of the abovearrow_forwardP3. Determine which of the diodes conduct in the circuit shown below. Each diode has an offset voltage (also referred to as forward bias voltage) of 0.6V when conducting. [Hint: If both D₁ and D2 were forward biased and conducting (hypothesis), it can be determined that, with diodes represented by the offset model, the potential at A is VA = 3.7V. Then go back to check the hypothesis to see if it holds] 122 A D₂ DI WWWKWW 5.4 V 1892 5V( F "Iarrow_forward
- Consider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OVarrow_forwardTake a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.arrow_forwardDraw the circuit diagrams of a p-n junction diode in Forward bias and Reverse bias. Draw the I-V characteristics for the same and discuss the resistance of the junction in both the cases.arrow_forward
- 3Q1:For the circuit on the right,a. Graph the output voltage v0 against the input voltage v1.Assume ideal diodes.b. Describe the behaviour of D1 in terms ofsemiconductor behaviour.Q2: For the circuit shown in Figure 1:1. Describe the behaviour of a p-n junction in terms of semiconductor behaviour.2. Describe and evaluate the circuit. Assume the values for the parameters in the circuit.You should critically evaluate the performance of the circuit and suggest potential applications.Q3: For the circuit shown in Figure 2, find the following:1. Describe the function of the circuit in terms of simple of semiconductor behavior.2. Evaluate the output voltage vo, assuming vs is 10 Sine (200t) mV, RE1 =100 Ω,and RE2 =900 Ω. The bypass capacitor (CE) is in parallel with RE2.3. Simulate the circuit and verify your answers; you should show the input voltage.and output voltage on the same graph.4. You should explain the characteristics of the amplifier.arrow_forwardExplain the V-I characteristics of a P-N junction diode when it is connected in forward bias and reverse bias. A PN junction diode gives a current of 50 mA at a room temperature of 20 dergee C when the forward bias voltage is 200mV. Determine (a) the saturation current with a negative bias (b) the diode current when room temperature is 30 degree C , and (c) diode current at a forward bias voltage.arrow_forwardFor a silicon pn junction, the reverse saturation current at 20o C is 10 pA. What will be reverse saturation current at 40o C if all other parameters expect temperature remains same?arrow_forward
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