Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.6, Problem 3.15E
To determine
To derive: The equation
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Which of the following options is FALSE about the semiconductor diodes?
Lütfen birini seçin:
O A. Diodes are made of semiconductor materials with additional dopping to enhance their
conducting properties.
O B. They are non-linear devices; hence, if one wants to draw their current-voltage graph,
they will end up with an exponential plot.
O C. The type of the semiconductor material matters in the characteristics of the device;
such that the forward-bias voltage (Vp.) is different for Ge and Si based diodes.
O D. They ideally let the electric current flow in the direction from cathode terminal to anode
terminal, while completely blocking it in the direction from anode to cathode.
A silicon diode said to be a 1-mA device displays a forward voltage of 0.7 V at a current of 1 mA.
Evaluate the junction scaling constant Ig. What scaling constants would apply for a 1-A diode of the same
manufacture that conducts 1 A at 0.7 V?
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- A diode is doped with NA = 1018/cm3 on the p-type side and ND =1019/cm3 on the n-type side. (a)What is the depletion-layer width wdo? (b) What are the values of xp and xn? (c) What is the value of the built-inpotential of the junction?(d) What is the value of EMAX? Use Eq. E(x) = 1 /εs ∫ ρc(x) dxand as shown.arrow_forwardA silicon diode said to be a l-mA device displays a forward voltage of 0.7 V at a current of 1 mA. Evaluate the junction scaling constant I,. What scaling constants would apply for a 1-A diode of the same manufacture that conducts 1 A at 0.7 V?arrow_forwardIn the circuit shown below. Let V-33 V and i,-28 mA and Voo -0.7 V: iD Vcos(at)V For t = 0s, the current in the diode equals: Ca. 0 mA Cb. 2 mA Cc. 4 mA Od. 2 mA Ift = T/4, then the current in the diode equals: Ca. 8.92 mA Ob. 5.71 mA Oc 7.14 mA Od. 4.57 ma Ift- T/2, then the current in the diode equals: Ca. 10.39 mA Cb. 16.39 mA Oc 14.39 mA Od. 12.39 mAarrow_forward
- A silicon diode said to be a 1-mA device displays a forward voltage of 0.7 V at a current of 1 mA. Evaluate the junction scaling constant I,. What scaling constants would apply for a 1-A diode of the same manufacture that conducts 1 A at 0.7 V?arrow_forwardIf a silicon diode's relationship between voltage and current is given by the approximation What is the diode voltage at 3.2 A for a reverse saturation current of 30 pA? Provide your response in millivolts.arrow_forward4) Which of the materials created by bringing together semi-ilyletken slices of different types of additives (P and N) as follows is not used as transitors? A)NPNB)PNC)PNNPD)NPPNE)PNParrow_forward
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