Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.13P
To determine

The junction builds in voltage, the width of the depletion region and its extent in each of p and n region when the junction terminal is left open. Also, the magnitude of the charge stored on either side of the junction.

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Upload answer sheets Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron current densities 5 A/cm2 and 2 A/cm² respectively at the edges of space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pn junction. 25 cm?/s Dn 10 cm?/s Dp 5x10-7s 5x107s Tno Tpo 1.5x1010 cm 3 n; CSync to ch Once you upload files from your second device, click on Camera 50f065047c73f&bd: F9jdF9jaA%3D%3D&tsi=163&et=#
Elaborate  following with Scientific Reason: Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
TRUE OR FALSE A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers. B. Outside thermal equilibrium, band bending may disappear if a large enough reverse bias is applied to the p-n junction.
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Diodes Explained - The basics how diodes work working principle pn junction; Author: The Engineering Mindset;https://www.youtube.com/watch?v=Fwj_d3uO5g8;License: Standard Youtube License