Chapter 3, Problem 3.29P

(a)

To determine

To sketch: A figure of short-base diode for the condition $N_A>>N_D$ .

(b)

To determine

To prove: The value of the excess minority carrier $Q_p$ and the current $I$ is given as

  $Q_p=\frac{1}{2}{\left(W_n\right)}^2\left[\frac{I_p}{D_p}\right]$ and $I=Aq{n}_i^2\left(\frac{D_p}{N_D\left(W_p-x_p\right)}+\frac{D_n}{N_A\left(W_n-x_n\right)}\right)\left(e^{\frac{V}{V_T}}-1\right)$ .

(c)

To determine

To prove: The expression of transit time and the incremental diffusion capacitance is given as

  $\frac{1}{2}\left(\frac{W_n^2}{D_p}\right)$ and ${\tau }_T\frac{I}{V^T}$ .

(d)

To determine

The width of the $n$ -region.