Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Concept explainers
Videos
Question
Chapter 3, Problem 3.4P
To determine
The value of
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Find values of the intrinsic carrier concentration ni for
silicon at -55°C.
1.5 x 1010 carriers/cm3
O 5 x 1010 carriers/cm3
2.7 x 106 carriers/cm2
2.7 x 106 carriers/cm3
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
Find the barrier voltage in a pn junction at T=300k assuming VT= 25.9 mV, NA=1018/cm3, ND=1017/cm3
0.0764 V
0.874 V
1.754 V
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- In the reverse-bias region the saturation current of a silicon diode is about 0.1 µA (T = 20°C). Determine its approximate value if the temperature is increased 40°C.arrow_forwardDetermine the diode current at 25°C for a silicon diode with Is = 10 nA and an applied voltage of 1.3 Varrow_forwardSilicon is doped with 6 × 1017 boron atoms/cm3 and 2×1017 phosphorusatoms/cm3 (a)Is this n-or p-type silicon? (b) What are the hole and electron concentrations at room temperature?arrow_forward
- A diode with a voltage drop in the forward direction of 0.7V at 1.0mA and n = 1, what is the value of the current if it operates at 0.5V?arrow_forwardConsider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3arrow_forwardWhat is the voltage across a silicon diode when a forward bias current of 2.39 mA is measured operating at 79 degrees Celcius with reverse saturation current is known to be in the region of 82 nA.arrow_forward
- For the circuit below with E = 10 V, R = 5800 N. Find the following: a) current in the circuit b) voltage across the diode c) voltage across the resistor Anode (A) Cathode (K) b E R wwwwarrow_forwardCalculate the built-in potential and depletion-region width for a silicon diode if NA is increased to 2×1018/cm3 on the p-type side and ND =1020/cm3 on the n-type side.arrow_forwardIn the reverse-bias region the saturation current of a silicon diode is about 0.1 μA (T= 20°C). Determine its approximate value if the temperature (25°C).arrow_forward
- solve for the current that flows through resistor 150. Let all diodes have cut-in voltage, Vy = 0.7V and internal resistance, rf = 50arrow_forwardGiven a diode current of 8 mA and n 1, find I s if the applied voltage is 0.5 V and the tem-perature is room temperature (25°C).arrow_forwardThe transition capacitance of semiconductor diode at reverse bias when applying a reverse voltage equal to 4 V is 5 nF. So the value of transition capacitance when applying a reverse voltage equal to 1 V isarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Conductivity and Semiconductors; Author: Professor Dave Explains;https://www.youtube.com/watch?v=5zz6LlDVRl0;License: Standard Youtube License