Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Concept explainers
Videos
Question
Chapter 3, Problem 3.28P
To determine
The value of
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
4- Electrical failure of insulators occurs due to
and
5- The other name of self-capacitance in a string of suspension insulators is
......
8. Each of the three insulators forming a string has a self capacitance of C farad The shunt capacitance of
each insulator is 02C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the
metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement:
)with the guard ring. (7) without guard ring.
10 95% () 86 13%|
8. Each of the three insulators forming a string has a self capacitance of C farad. The shunt capacitance of
each insulator is 0-2 C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the
metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement:
(i) with the guard ring, (ii) without guard ring.
[(i) 95% (ii) 86-13%)
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- 8. Each of the three insulators forming a string has a self capacitance of C farad. The shunt capacitance of each insulator is 0-2 C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: (1) with the guard ring. (if) without guard ring. () 95% (i1) 86-13%]arrow_forwardB/ The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 x 10-4 s/m. Find the barrier potential at 300°K, if the Hn = 2.4µp?arrow_forward2. There is a (p+)-n semiconductor for solar cell application. The p-n junctions are used to produce electrons and holes by adsorbing photons in the junction. Assume that the doping concentration NA on the p-side of this junction is the same as N, on the n-side. Each side is many diffusion lengths long. Find the expression for the hole current I, in the p-type material.arrow_forward
- Answer ASAP, I'll upvote. Thanks. Take the first part of the energy band figure shown below where material A is attached to material B. If a positive voltage was applied to A, and B was attached to ground, is the AB junctionforward-biased or reverse-biased? The built-in voltage of a PN junction is due to a charge gradient between the two sides of the junction, as shown by the graphs. What is the cause of this charge gradient? Answer in 1 sentence.arrow_forwardA. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.arrow_forwardEach of three insulators forming a string has self-capacitance of "C" farad. The shunt capacitance of each cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.arrow_forward
- A string of 8 suspension insulators is to be fitted with a grading ring. If the pin to earth capacitances are all equal to C, find the values of line to pin capacitances that would give a uniform voltage distribution over the string.arrow_forwardA pn junction has NA >> ND . We expect that: There is no depletion region, since NA * ND. The depletion region is wider in the p-type material than in the n-type material. The depletion region width is equal in the n-type and p-type regions. The depletion region is wider in the n-type material than in the p-type material.arrow_forwardThe electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statement is not true? E (V/cm) X (4em) -0.1 Both n-type and p-type depletion regions are uniformly doped. The potential difference across the depletion region is 700 mV. Left side of the junction in n-type and right side is p-type.arrow_forward
- Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?arrow_forward7. Each of three insulators forming a string has self-capacitance of "C farad. The shunt capacitance of each cap of msulator is 0 25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.arrow_forwardEach of the three insulators forming a string has a self capacitance of C farad. The shunt capacitance of each insulator is 0-2 C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement : (1) with the guard ring, (ii) without guard ring. [1) 95% (i) 86-13%]arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
Diodes Explained - The basics how diodes work working principle pn junction; Author: The Engineering Mindset;https://www.youtube.com/watch?v=Fwj_d3uO5g8;License: Standard Youtube License