Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.3, Problem 3.5E
To determine
The electron current density and cross-sectional area.
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6) You work as an engineer in a company and you have been given the assignment of
measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor
material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a
length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential
difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you
measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a)
calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of
this material.
30 ст
2 ст
1 cm
(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is
100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per
cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon
n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
2 points
Hall coefficient of a specimen of depend silicon found to be 3.66x10 m/C.
The resistivity of the specimen is 8.93×10-³2 m. Find the density of the charge
carriers (in electrons/m3) and the mobility in (m/V.s).
1.8e22, 0.04
O 1.8e22, 0.05
O 1.7e22, 0.05
O 1.7e22, 0.04
3 points
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Problems Q1: A bar of intrinsic silicon having a cross section area of 3x10 m² has an n=1.5x10"m. If H.=0.14 m²/V.s and Hp-0.05 m/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. E= 1.12 eV. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m2, respectively. (Ans: n=5.73x10²/m', p=8.43x10%/m) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of N, and N, are 2.8x1025/m2 and 1.04x1025/m2, respectively. (Ans: (a) 7.68x10/m², (b) 2.38×10/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. m,"=0.067 mo, m,=0.48 mo (Ans: -38.2meV)arrow_forwardQuestion3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine the velocity of the electrons. Use u-1350 cm?/V.sec Question4: A pn junction is biased with a reverse voltage (VR) and is doped with NA = 2x10 icm' and Np-9x10" (cm' Determine the capacitance of the device with (a) Va=Ov, (b) Vx=lv. Use e, = 11.7 eg, Ev-8.854x10 " F/em, q=1.6x10 "c, n=1.5x1010 fem , m=1/2, Py=25.8mV, Cross-section area - 10 em.arrow_forwardProblem 3 Find the concentration (densities) of holes and electrons in N-type Silicon at 300 °K, if the conductivity is 300 S/cm. Also find these values for P-type silicon. Given that for Silicon at 300 °K, n, = 1.5 x 101%cm, u, = 1300 cm2/V-s and u, = 300 cm?/V-s. Solution: (a) Concentration in N-type Silicon The conductivity of an N-type Silicon is o= qnarrow_forward
- 1. A Germanium sample is 5 mm long and has a rectangular cross-section, 50 μm by 150 μm. A Phosphorus atom with concentration of 4.4 x 10¹5/cm³ at 300 K is added and corresponds to one impurity atom for 107 Ge atoms. A steady current of 3 juA exists in the bar. a. Set up the equations for concentrations, conductivity, resistance, and voltage. b. Solve for the electron and hole concentration, conductivity, resistance, and voltage. 2. A basic junction diode is operating at a room temperature of 25°C and has a reverse current of 1 nA. a. Set up the different diode equations. b. Solve for the diode current at room temperature, reverse current, and threshold voltage when the temperature becomes 72°C.arrow_forwardExample (3-3); A Silicon cube with dimensions (10*10*10) mm contains at a certain temperature (10) gallium atom in the cubic meter. Calculate the resistance of this cube and compare it to the resistance of an identical cube that contains (10) arsenic atom in the cubic meter of the Silicon. The hole mobility is (0.05 m?/N.sec.) and the electron mobility is (0.12 m?/V.sec.).arrow_forwardYou work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information calculate the electrical conductivity of the material at 20 and 100 °C and 30 ст 2 cm 1 стarrow_forward
- (1-7) Find the concentration of holes and electrons in a p-type Germanium at 300° k, if the conductivity is per ohm cm .given for Germanium n;-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm2/v-s, and for Silicon n=1.5x1010/cm', un=1300 cm?/v-s, Hp=500 cm?/v-s per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm perarrow_forwardNotes: Answer all questions With All Necessary Details. Q. 1: The e electrical resistance of a P- N crystal is very high at the reverse biasing, explain why. Q.2: Draw and describe the electric charge density graph through a P- N crystal. Q.3: Explain with drawing why the majorities in the N- type semiconductors are the free electrons. Q.4: Explain why the saturation current depends on temperature.arrow_forwardGiven that mu n = 1350 cm/V.S, Mp 480 cm²/V.s and q = 1.6 x 10-19 C A) A potential difference of 2 V is applied across the 2 ends of an n-type piece of silicon of length 10 um . Calculate the velocity of electrons and holes in this material.arrow_forward
- 3.4 A uniform bar of n-type silicon of 2-um length has a voltage of 1 V applied across it. If ND = 10¹6/cm³ and μn = 1350 cm²/V · s, find (a) the electron drift velocity, (b) the time it takes an electron to cross the 2-μm length, (c) the drift-current density, and (d) the resistance and drift current in the case that the silicon bar has a cross-sectional area of 0.25 μm².arrow_forwarda) For the given silicon semiconductor resistance of radius =1mm and height = 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm3. Assume mobility values of un = 1350 cm?/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K=86x106, mm= 10 m) b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). ) Find the majority and minority carrier concentration values at T=350K. Silicon Np Write final answer below (upload detailed answer): a) l= b) V= c) Majority carriers are.. Majority carriers concentrations [cm-3]= Minority carriers are.. Majority carriers concentrations [cm-3]=arrow_forwardA silicon diode described by the Shockley equation has n = 2 and operates at 150° C with a current of 1 mA and voltage of 0.25 V. Part A Determine the current after the voltage is increased to 0.32 V. Express your answer to three significant figures and include the appropriate units. HA ? ip = Value Unitsarrow_forward
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