Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.22P
To determine

To derive: The derivation of current-voltage relationship is given as

  IIp=Aqni2(DpLpND)(eV V T 1)

Also, the value of Is and V .

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An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X -3 10¹7 cm-³ and N₂ = 5 X 10¹6 cm-³ at T = a 300 K. Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vbi. Vbi = 0.856 V O Vbi Vbi = 0.814 V Vbi = 0.796 V Vbi = 0.773 V o Vbi
Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping concentrations of Na = 10¹6 cm-³and N₁ = 10¹5 cm-³. Assume that the intrinsic concentration n₁ = 1.5 x 10¹0 cm-3 and the reverse bias V₁ = 5V Note/ = 1.035 x 10-¹2F/cm e = 1.6x 10-¹⁹ C
Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping concentrations of Na = 101¹6cm-3and Na = 10¹5 cm-3. Assume that the intrinsic concentration n₁ = 1.5 x 10¹0 cm-3 and the reverse bias V₁ = 5V Note/1.035 x 10-¹2F/cm e 1.6x 10-19 C
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