Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.18P
To determine

To show: The derivation of the depletion layer width and thecharge stored on either side of the junction for reverse bias pn junction is given as

  W=W0(1+ V R V 0 ) and Qj=Qj0(1+ V R V 0 ) respectively.

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An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X 1017 cm-3 cm³ and Na and N₂ = 5 X 1016 cm¯³ at T = 300K. Determine the peak electric field for this junction for a reverse voltage of 2 V. Emax = 3.88 X 105 V/cm Emax = 1.35 X 105 V/cm Emax 1.70 X 105 V/cm O Emax = 3.21 X 105 V/cm =
A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3
In the case of pn junction of the same material, the internal potential Vbi increases as more doping is performed in each of the p and n regions. Explain this by drawing an energy band diagram.
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