Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Videos
Question
Chapter 5, Problem 5.11P
(a)
To determine
The gate voltage for a p -channel MOSFET.
(b)
To determine
The highest voltage allowed at the drain.
(c)
To determine
The current for the given values of drive voltage.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain-
source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with
necessary example any consequences that will happen for any condition of MOSFET.
360
10 V
ev
7V
320
280
Ohmic
region +
240
200
160
120
5.5 V-
80
40
2
3
Vos [V]
Figure 1
lo [A]
Q: What happens, exactly, when a forward-bias voltage
(VA) is applied to the pn-junction?
05: Choose the correct answer:
1. The current in FET flows between
terminals.
(Drain and gate
Drain and source
Gate and soarce
None of these)
2. The threshold voltage is
in enhancement type metal oxide semiconductor
field effect transistor.
(Positive
Negative
Zero
Positive)
3. The drift current density effected by
(An electric filed
• Concentration gradient in holes • Concentration gradient in free
electrons
All of these)
4. The band gap between conduction and valance band in an insulator is
(Low
Very low
High
Moderate)
5. Operating point of a transistor must be independent of
(Biasing
Amplification
Variations in parameters
Filtration)
6. When a transistor operating at the central of the load line is declining, the current gain
will change the Q-point
(down
up
nowhere
of the load line)
7. A bipolar junction transistor when used as a switch, operates in
(cut-off and active region
active and saturation region
cut-off and saturation
region
all of these)
8. Inversion layer in an MOS…
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Q1: for a silicon transistor in the figure below = 200 dc {What is the voltage between the collector and emitter VCE, drawing the load line and finding the Q pointarrow_forwardIn a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.arrow_forwardAn n-channel silicon MOSFET has the following parameters: W = 6 µm, L = 1.5 µm, and tox = 8 nm. When the transistor is biased in the saturation region, the drain current is Ipsat = 0.132 mA at 1.25 V. Determine the electron mobility and the VGS 1.0 V and Ipsat 0.295 mA at VGS threshold voltage.arrow_forward
- An n-type MOSFET has a turn-on voltage of VTO=0.6V and is operated at a gate-source voltage of 1V. The drain-source voltage is also 1V. In what region is the MOSFET operating? a. Saturation region b. None of the above c. Triode region O d. Ohmic regionarrow_forward04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)arrow_forwardQ1) Answer True or False for the following: 1- Field-effect transistors are Bipolar devices. 2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to source voltage. 3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the breakover potential. 4- The benefit of SCR Crowbar is power amplification. 5- Most op-amps require only a positive dc supply voltage.arrow_forward
- d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.arrow_forwardName: (11) The supply voltage VCC equals 9V. The base resistor RB is 42. Take 0.6V for the knee voltage of the base-emitter diode. Draw the load line for a short-circuit current of 15mA (a) What is the value of the collector resistor RC in that case? (b) What is then the voltage Va across the transistor? (c) What is then the current le through the transistor? RB www VCC 9.0V RC Ic (mA) 15 D 10 Student nr. saturation region 5 Answers: (a) RC- (b) Va (c) Ic= active region (12) Same circuit and transistor as above, but now with a short- scircuit current of 5 mA. Draw the new load line. (a) What is the value of the collector resistor RC in that case? (b) What is then the voltage Vc across the transistor? (c) What is then the current Ic through the transistor? cutoff region 10 15 VCE (V) {npn} 20 Answers: (a) RC = (b) VCE= (c) Ic= L₂=0.4 mA 1₁-0.3 mA IB=0.2 mA Ig=0.1mA Ig=0 mAarrow_forwardWhat is the channel in an n-type MOSFET formed of? a. Bound holes b. Mobile holes c. Bound electrons O d. depletion region O e. Mobile electronsarrow_forward
- The terminal of the JFEI' is the equivalent of the emitter terminal of a BJT. Select one: A. drain B. gate C. anode D. source Previous page Next pagearrow_forwardDraw the IV graph for a MOSFET in deletion mode, with a drain source current of 1.2 mA. Indicate this value on the grapharrow_forwardThe maximum drain current for the n-channel enrichment type MOSFET is 30 mA.Determine VGS with this current level if k= 0.06x10-3 A/V2 and VT is the maximum value.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License