Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.38P
To determine

The value of drain current.

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Q2 Design a voltage divider bias circuit for an npn silicon transistor having B %D 100 to be used in a Common Emitter configuration. The quiescent point = 1 mA, VCE = 5 V. The supply voltage (Vcc) is 15 V. (Q point) is to be l. Assume VĘ = 0.1Vcc and BRĘ 2 10R2. (a)Find all the resistors values and draw the schematic diagram of this Common Emitter Amplifier with bypass capacitor CE.
The current gain for the transistor in the circuit shown below is B-60, VEn(on) =0.7V and Vic-sat" - 0.2V. For V' = 14.2V when the V, = 3.2V, Rc =8kn and Ic/l =25 find the following: V, Vo Re The value of lc is: O a. 2.188 mA O b. 1.75 mA Oc. 1.4 mA O d. 1.12 mA The value of is Rg: O a. 287.39 kn O b. 229.91 kn O c. 147.14 kn O d. 183.93 kn The value of Vo is: O a. 11.2 V O b.9V O c. 17.5 V O d. 14 V
Consider an nMOS with tox=9 nm, µn=500cm²/Vs, Vt=0.7V, and W/L=10. Find the drain currents for the following cases: i. Ves=5 and VDs=5V ii. Ves=5 V and VDs=1V

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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