Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.3, Problem D5.10E
To determine
The value of resistor
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If in the circuit of Example 5.5 the value of R, is doubled (to 13.1 k52), find approximate values for I, and V»
Ans. 0.15 mA: 0.05 V
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Please help with this Field-Effect Transistor problem. The problem is typed below, see the attached diagram for reference.
5.57 In the circuit of Fig. P5.57, the NMOS transistor has |Vt| = 0.9 V and VA = 50 V, and operates with VD = 2 V. What it the voltage gain v0/vi? What do VD and the gain become for l increased to 1 mA?
Identify the source, drain, gate, and bulk terminals and find the current I in the transistors in Fig. P5.11. Assume V=0.6 V.
Q-0.2 V
W 10
+5
(a)
+0.2 V
I W 10
=
+₁₁
(b)
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- For the circuit in Figure 1, the transistor is biased so that ICQ is 10 mA and VCEQ is 8 V. As a starting point, let VRE be 20% of VCC. Calculate the values needed for RE and RC.Assume β is 100. Select the nearest standard values for the twoCalculate the values of R1 and R2arrow_forward1- a. For the circuits given below calculate the currents through the zener diode (V5.1V) and the current through the Si-diode. 1k Ohm 1k Ohm -10V 1k Ohm 12V b. The emitter of an NPN type BJT is connected to ground. Its base is connected to a 5V supply with a 10K resistor. Its collector is connected to the same supply with a 6K resistor. Calculate the range of ß such that the transistor is not saturated.arrow_forwardIn CB configuration, the value of a=0.98A. A voltage drop of 4.9V is obtained across the resistor of 5KQ when connected in collector circuit. Find the base current. a) 0.01mA b) 0.07MA c) 0.02mA d) 0.05mAarrow_forward
- A particular transistor has a power rating at 25°C of 200 mW, and a maximum junction temperature of 150°C. What is its thermal resistance? What is its power rating when operated at an ambient temperature of 70°C? What is the junction temperature when dissipating 100 mW at an ambient temperature of 50°C?arrow_forwardA particular MOSFET has VA = 10 V. For operation at 10 μA and 100 μA, what are the expected resistances? In each case, for a change in vDS of 1 V, what percentage change in drain current would you expect?arrow_forward1. A unijunction transistor has 10 V between the bases. If the intrinsic stand off ratio is 0.65, find the value of stand of voltage.What will be the peak-point voltage if the forward voltage drop in the pn junction is 0.7 V ? GIVEN! Vp RsI RB2 Nearrow_forward
- *5.56 For the circuits shown in Fig. P5.56(a) and Fig. P5.56(b), find the labeled node voltages. The NMOS transistors have V,= 0.4 V and k'(W/L) = 5 mA/V². +2 V +1 V 4 kN +0.5 V o V3 Qi Qi Q2 Q2 V2 Vs 4 k 4 kN -1 V (a) (b) Figure P5.56 (a) Figure P5.56 (b)arrow_forward5. The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. (a) Find the collector current, lc, and voltage VCE, if ß of transistor is 60. (b) (b) Find Ic and VCE if B changes to 80. +Vcc (9V) 60k 0.5k + VCE VBEarrow_forwarda. In the circuit shown, measurements give Vg = + 4.3 V and Vc = + 2.3 V. Determine the mode of the silicon BJT and calculate the base current, the emitter current and B of the transistor. b. Now replace the 20 KO resistor by a silicon diode with anode connected to the base of BJT. Determine the state of the transistor and calculate the base current. +5 V o ve 20 kn 230 Narrow_forward
- Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kfarrow_forwardComplete the given BJT circuit. Solve for the value of the resistors and the voltage supply that will satisfy the given DC loadline. Assume IC=IE and RC=RE. Show and label properly the required final circuit. 5 mA 2.5 mA * IC IC 0 15 V 30V VCE RB B +VCC C E RC B=100 RE ...arrow_forward2. For the circuit below ß = 100, V, BB in 10V. Determine what range of V will cause both transistors to be in forward active mode. For each transistor, determine the base and collector currents when they are in forward active mode. (Hint: determine what conditions would cause each to be in saturation, and that both can't be in saturation at the same time.) Vbb L 100k Vin o Vcc 1k Q1 Q2 = 5V, V = CCarrow_forward
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