Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Question
Chapter 5, Problem D5.36P
To determine
Minimum require value of
Minimum channel length required.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Q-3-B: If VRE =- 0.7 V and VCg 0.8 V for Si PnP transistor. Where does the
transistor operating in? Prove your answer.
4. Circuit Analysis:
5. Given:
Vd1 = Vbe = 0.7V.
Icq = 0
Required: The dc voltages at the bases and emitters of the transistors Q1 andQ2
and VceQ for each transistor.
wwww
Vcc p +24
R1
1k
Q1
R2
53 0
ci
C2
Rg
RL
120n
Q2
R3
1k
2.
We discussed in class how the channel capacitance can be modeled in different
region of operations in MOSFETs. For your reference, the slide is shown below.
Explain how you think the model would look like if a transistor is in velocity
saturation region?
Channel Capacitances
Channel capacitance is a voltage dependent and non-linear
capacitance
S
C
P-sub Bulk
Cutoff Region
D
Operation Region
Cutoff
Linear
Saturation
S
P-sub Bulk
C
Linear Region
CGBCH
CoxWLeff
0
0
1
2
3
S
P-sub Bulk
Saturation Region
CGSCH
0
сат
CoxWL eff
1
2
CGDCH
0
CoxWLoft CoxWLoff
eff
D
0
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]arrow_forward"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why? How does that actually work? My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking. He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!arrow_forwardAn NPN bipolar junction transistor having VB > VE and Vc = (VB - 400 mV) is: Select one: O a. Operating in saturation. O b. Operating in deep saturation. O c. Operating in active mode. O d. Operating at the edge of soft saturation. In order to operate in the active mode. annpn transistor must have VBE 0 and Vec Select one: Tuearrow_forward
- Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kfarrow_forward2. For the emitter-stabilized bias circuit, determine: a. IBQ. b. IcQ. c. VCEQ. d. Vc. e. V B. f. VE. 20 V 470 2 ICQ 270 k2 oVc VB B= 125 VCEQ IBQ OVE 2.2 k2arrow_forward1- a. For the circuits given below calculate the currents through the zener diode (V5.1V) and the current through the Si-diode. 1k Ohm 1k Ohm -10V 1k Ohm 12V b. The emitter of an NPN type BJT is connected to ground. Its base is connected to a 5V supply with a 10K resistor. Its collector is connected to the same supply with a 6K resistor. Calculate the range of ß such that the transistor is not saturated.arrow_forward
- Q1) Answer True or False for the following: 1- Field-effect transistors are Bipolar devices. 2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to source voltage. 3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the breakover potential. 4- The benefit of SCR Crowbar is power amplification. 5- Most op-amps require only a positive dc supply voltage.arrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forwardFor a constant value of VGS, the JFET acts as a linear resistivity device (in the ohmic region) until the depletion region of the reverse- biased gate-source junction extends the width of the channel (a condition called ......... ). Your answerarrow_forward
- For the MOSFET circuit given here, V to = 2V, K = 160μA/V2. Design the values of R1 and R2 such that the drain current (ID) is 0.5mAand the current through the R1 and R2 is one-tenth of ID. Assume the transistor isin saturation (Hint: μ = 1 x 10-6).arrow_forwardWhat is the preferred D-MOSFET biasing method? O a. Drain-to-source voltage is zero O b. VGS= 0. O c. Apply source voltage to gate O d. Hold gate-to-source at AC input levelsarrow_forward3. Below is a BJT based amplifier 3.9k2 37 Vi I B-100 4.7ks a. Find IB, IE b. Draw the load line for this transistor showing the operation point for this network c. Draw the n and T network AC circuit for this network d. Find r. e. Find Z; and Z, for r, = 70 Kiloohms f. Find Ap g. The circuit shown is placed in a karaoke machine, explain why the quality of sound from the speakers becomes bad as the singer starts singing loudly and has the best quality when singing softly. What is this phenomenon called?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License