Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem D5.51P
To determine
The value of the gate widths for thethree MOSFETs.
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A MOSFET has a mobility of 500 cm2 /V · s and channel length of 0.25μm. What is its cutoff frequency if the gate voltage exceeds the threshold voltage by 1 V? (b) Repeat for a channel length of 40 nm.
5. The LED in Fig.P5 requires 30 mA to emit a sufficient level of light. For the following
circuit values, determine the amplitude of the square-wave input voltage necessary to make
sure that the transistor saturates. Use 110% of the minimum value of base current as a safety
margin to ensure saturation. Vcc =9 V, vCE(sat) = 0, Rc=270 2, Rp = 3.3 K 2, and
BDc = 50.
+Vcc
RC
ON
ON
RB
Vin
1 s
OFF
5. The LED in Fig.P5 requires 30 mA to emit a sufficient level of light. For the following
circuit values, determine the amplitude of the square-wave input voltage necessary to make
sure that the transistor saturates. Use 110% of the minimum value of base current as a safety
margin to ensure saturation. Vcc =9 V, VCE(sat) = 0, Rc= 270 N, Rp=3.3 K Q, and
BDc = 50.
%3D
+Vcc
Rc
ON
ON
RB
Vin
1s
OFF
Fig.P5
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- For a constant value of VGS, the JFET acts as a linear resistivity device (in the ohmic region) until the depletion region of the reverse- biased gate-source junction extends the width of the channel (a condition called ......... ). Your answerarrow_forwardAn N-channel MOSFET with N+-poly gate is fabricated on a 15 n. cm P-type Si wafer (a) Determine the flat-band voltage Vfb. (b) What is the threshold voltage, Vt? (c) A circuit designer requested N-MOSFET with Vt = 0.5 V from a device engineer. It was not allowed to change the gate oxide thickness. If you are the device engineer, what can you do? Give specific answer.; including what type of equipment to use.arrow_forward/ Design a circuit using an n-channel E-MOSFET with the following datasheet specifications: Ixon) = 500 mA at VGS 10 V and VGS(h) = 1 V. Use a (+12 V) dc supply voltage with voltage divider bias. The voltage at the drain with respect to ground is to be (+7.78 V), the voltage at the source with respect to the ground is to be (+2.1 V), and the maximum current from the supply is to be 21.1 mA.arrow_forward
- In a MOSFET, Cox represents the capacitance formed by Select one: O a. The gate and the substrate O b. The substrate O c. The drain and the substrate O d. The source and the substratearrow_forwardVCC 10V R3 21k0 R1 10k Construct the following circuit, A BJT transistor with R2 BETA of 100, R1 =10 kohm, R2 = 5.6 kohm, Rc= 1 5.6KQ R4 kohm, Re= 560ohm. 5600 A.) Find the value of base voltage, emitter voltage and the collector current Q1 BC107BParrow_forwardAn npn transistor with IS = 5×10-16 A, βF = 100, and VA = 65 V is biased in the forward-active region with VBE = 0.72 V and VCE = 10 V. a) What is the collector current IC? b) What would be the collector current IC if VA = ∞? c) What is the ratio of the two answers in parts a and b?arrow_forward
- Q4/ For a transistor, the current gain = 45 and %3D voltage drop across 1kQ which is connected in the collector circuit is 1 volt. Find the base current for common emitter connection shown in circuit. O A. 27 mA O B. 0.011 mA O C. 0.22 mA O D. None of the abovearrow_forwardDetermine Ic lg le respectively for the PNP transistor shown in the figure below. Assume Is = 1x10-16 A. V = 26mV. B = 50, VA = ", and Rc = 0.1 KQ. %3D Q1 Vcc 2 V 1.2 V- Rc Select one: O a. 2.306 mA, 0.046 mA, 2.352 mA O b. 5.766 mA, 0.115 mA, 5.881 mA O c. None of these O d. 11.531 mA, 0.231 mA, 11.762 mA Actvarrow_forwardD5.49 The NMOS transistors in the circuit of Fig. P5.49 have V; = 0.4 V, u„Cor = 400 µA/V², 2 = 0, and L1 = L2 = 0.18 um. Find the required values of gate width for each of Q1 and Q2, and the value of R, to obtain the voltage and current values indicated. +1.8 V 0.1 mA R o +1.4 V Q2 o +0.6 V Figure P5.49arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License