Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.35P
To determine
The factor by which the output resistance
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In a N-Channel JFET if the voltage across the drain and source (Vps) is increased then
explain in detail with neat diagram the changes in drain current. Justify your answer.
The Pinch off voltage for N-Channel JFET is -3V, maximum saturated drain current 8mA and the value of VGS is -1.5 V. Calculate drain current,
a.
4 mA
b.
2.5 mA
c.
2 mA
d.
18 mA
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(iii) the current through zener diode, Iz
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4 kQ
OTM UTM UTM
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2 ka
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Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- The Pinch off voltage for N- Channel JFET is -3V, maximum saturated drain current 8mA and the value of VGS is -1.5 V. Calculate drain current, a. 18 mA b. 2 mA c. 2.5 mA d. 4 mAarrow_forwardAssuming a JFET has an Ipss = 9 mA and VGs(off) = -8 V (maximum). Using these values, determine the drain current for VGS = -2 V in mA.arrow_forwardIf you apply a positive bias to the body of an n-channel MOSFET relative to its source terminal, what is the effect on the threshold voltage? O The threshold voltage will decrease O None of the above The threshold voltage will stay the same You would not do this because it would forward-bias the source/body pn junction The threshold voltage will increasearrow_forward
- Given the following specification for the JFET in the circuit below (ldss = 10 mA and Vp = -3 V), determine the necessary value of R1 and RD1 that will provide a drain current (lb) of 4.2 mA and drain terminal voltage of 3.7 V. 12V Į R1 87K RD1 Q1 500arrow_forward10 k2, RE = R, = 150 2, r'e = 50 2, and Bac = 50. The For a common-emitter anmplifier, R value of the voltage gain is +Vcc Rc C3 R oVout REI R2 RE2 Select one: a. 67 b. 100 C. 50 d. 28.5arrow_forwardwe can see the following signal at which point of the modulator? 6 A Modulating signal D Carrier AM output В B D None of these C Cor D A This signal will never be presented in this modulatorarrow_forward
- A base bias method is used in the following circuit. For Bpc - 300, the value of emitter current is: -Vc. +15 V Rc 1.8 k2 RB 560 k2 7.82 mA O 6.84 mA O 7.27 mAarrow_forwardIn the constant-current region, how will the drain current change in an n-channel JFET? O As VGS decreases ID decreases. O As VGS increases ID increases O As VGS decreases ID remains constant. O As VGS increases ID remains constant. Unlike JFETS and D-MOSFETS, the E-MOSFET cannot operate with VGs = 0 V. Select one: O True O Falsearrow_forwardIf VCC = +18 V, voltage-divider resistor R1 is 4.7 kOhms, and R2 is 1500ohms, Solve for base bias voltage:4.35 V8.7 V2.9 V0.7 V Solve for VBE: 8.7 V0.3 V4.35 V0.7 Varrow_forward
- The transistor shown in the crout below has a oument gain of p-100. You may assume the voltage between the base and the emer is 0.7V Calculate the collector voltage V 1820 ΚΩ b 3.5k Vc=? 20 9Varrow_forwardDetermine the drain current of the source follower circuit shown below. Assume R = 2.5k0, L = 5µm, and W = 10um. M1 NMOS 1.5V- Parameter NMOS PMOS 120 μΑ/νε 40 μΑ/V Vro 800 mV -900 mV R1 0.5 vỹ 0.6 vỹ 0.7 V 0.6 V R O 1.8501 µA O 42.3560 µA O 1.8510 mA O 297.8594 uAarrow_forward1. The drain current for the E-MOSFET shown in the following figure is 3.0 mA. What type of bias i this? a. Can a JFET use this type of bias? b. Compute the value of VD. c. Compute the value of VG- RG www 10 ΜΩ +VDD +15 V www RD · 2.7 ΚΩ =Iarrow_forward
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