Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.58P
a
To determine
To show: The PMOS transistor to operate in saturation region,
b
To determine
The voltages
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VdsSV is applied, what would be the source-drain current if the device is
Determine the value of Vx and the mode of operation for the PNP transistor
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%3D
%3D
01 Vcc 2V
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Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kfarrow_forwardExercise # 3 - MOSFET Bias The following circuit is used to bias an NMOS type MOSFET transistor. In the circuit, we want the DC voltage marked Vx to have a value of 0 V. provided by the transistor The following is data manufacturer: K 350μA / V² A (lambda) 50μV-¹ -5V VTH 0.64V Threshold voltage VB Part A - Calculation of current in the drain (ID) From the given information, determine the value of the current in the drain (I_D) Justify your result using proper circuit analysis techniques. Part B - Calculation of the voltage between Gate-Source (V GS) Considering the information and the analysis carried out up to this point, determine the value that the voltage between gate and source must have (VGS) Justify your result using proper circuit analysis techniques. Part C-Proof of the saturation condition Considering the information and analysis carried out up to this point, show that the transistor is in the conditions of the saturation region. Part D-Voltage Divider Design for Transistor…arrow_forwardD5.49 The NMOS transistors in the circuit of Fig. P5.49 have V; = 0.4 V, u„Cor = 400 µA/V², 2 = 0, and L1 = L2 = 0.18 um. Find the required values of gate width for each of Q1 and Q2, and the value of R, to obtain the voltage and current values indicated. +1.8 V 0.1 mA R o +1.4 V Q2 o +0.6 V Figure P5.49arrow_forward
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- Design the following circuit in such a way that the MOSFET operates at a drain current, ip, of 0.5 mA and v, = 0.5V. That is, find the value of Rp and Rg. Here, V, = 0.7V, K = 2² and R, = 10 kN. Note that you MUST verify your assumption! Use real MOSFET equations. 2.5 V 5 V ip Rp R1 vo VA Rs R1 -2.5 V -5 V www www ww-arrow_forwardThe channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in Q) of an NMOS operating in the linear region given the following MOSFET specifications: k = 3.77µA/V2, wIL = 125, VGS = 3V, VTH = 0.76V, and Vps = 0.64V. Express your answer using 3 decimal places.arrow_forward3) Draw the energy band diagram along the XX' line of the following MOSFET structure, considering thermal equilibrium. VGs Vps Gate Oxide -- X' p+ Source p+ Drain n Substratearrow_forward
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