Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.29P
(a)
To determine
Maximum resulting mismatch in the drain currents.
(b)
To determine
Maximum resulting mismatch in the drain currents.
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d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA.
Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.
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Show the details of your work.
Design the following MOSFET circuit for it
to operate in saturation mode with 0.5 mA
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10 V
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Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.arrow_forwardQuestion 1 Derive the drain current equation of an nMOS transistor in both linear and saturation regions. Draw 1-V characterisitic curves of a typical NMOSFET clearly showing the aforementioned regions.arrow_forwardDraw the IV graph for a MOSFET in deletion mode, with a drain source current of 1.2 mA. Indicate this value on the grapharrow_forward
- 2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0arrow_forwardDraw the large-signal dc circuit model for a silicon pnp transistor in the active region at room temperature. Include the constraints of currents and voltages that guarantee operation in the active region. Repeat for the saturation region. Repeat for the cutoff region.arrow_forward6. The MOSFET in the circuit shown has V₁ = 1.5 and k = 100 mA/V². a. Determine the drain current. b. Determine the voltage Vx at node X. 5V 10k 5V 1k X 50arrow_forward
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- For a constant value of VGS, the JFET acts as a linear resistivity device (in the ohmic region) until the depletion region of the reverse-biased gate-source junction extends the width of the channel (a condition called .). * •.....arrow_forwardName: (11) The supply voltage VCC equals 9V. The base resistor RB is 42. Take 0.6V for the knee voltage of the base-emitter diode. Draw the load line for a short-circuit current of 15mA (a) What is the value of the collector resistor RC in that case? (b) What is then the voltage Va across the transistor? (c) What is then the current le through the transistor? RB www VCC 9.0V RC Ic (mA) 15 D 10 Student nr. saturation region 5 Answers: (a) RC- (b) Va (c) Ic= active region (12) Same circuit and transistor as above, but now with a short- scircuit current of 5 mA. Draw the new load line. (a) What is the value of the collector resistor RC in that case? (b) What is then the voltage Vc across the transistor? (c) What is then the current Ic through the transistor? cutoff region 10 15 VCE (V) {npn} 20 Answers: (a) RC = (b) VCE= (c) Ic= L₂=0.4 mA 1₁-0.3 mA IB=0.2 mA Ig=0.1mA Ig=0 mAarrow_forwardFigure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]arrow_forward
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NMOS vs PMOS and Enhancement vs Depletion Mode MOSFETs | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=kY-ka0PriaE;License: Standard Youtube License