Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.19P
To determine
The value of
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1. Each E-MOSFET in the following figure has a Vas of +10 V or -10 V, depending on whether it is
an n-channel or a p-channel device. Determine whether each MOSFET is on or off.
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10 ΜΩ
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-25 V
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Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider
circuit with Q-point of Ic 10 mA and VCE= 10 V. Use standard valued 5% resistors and draw a schematic
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diagram of your design
Quèstion 1
VCF at B-80of the silicon transistor shown in the figure below is equal to
VCE
3.
6.58 V
7.575 V
5.5 V
None of the above
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- specified Pinch- off Voltage of =0, what is Vos at the 91 A JFET has a 5 V. when Vos Point where the drain current become Constant?arrow_forwardVCE at B-80 of the silicon transistor shown in the figure below is equal to 150KL § 2KSZ VCE 6.58 V 7.575 V 5.5 V None of the abovearrow_forwardQuèstion 9 In D-MOSFET, Ipss is the maximum Drain current True False L A Moving to another question will save this response. O Type here to searcharrow_forward
- Solve for the drain voltage and drain current. VDD=5, k=75uA/V2 , Vth=0.75V, R=100. Use iD=(1/2)k(VSG- l VTH l)2.arrow_forward5. A JFET has a specified pinch-off voltage of 5 V. When VGs = 0, what is Vps at the point where the drain current becomes constant?arrow_forwardThe junction between the base and collector of a transistor is called: Collector Junction Emitter Junction O Source Junction Base Junctionarrow_forward
- Small amount of space it takes on a chip O All of the above 7. The main types of field effect transistor are O BJT and FET O UJT and FET O JFET and MOSFET O None of the above 9.The arrow on the symbol of MOSFET indicat that it is a N-channel MOSFET the direction of electrons O the direction of conventional current flow O that it is a P-channel MOSFETarrow_forward1. The drain current for the E-MOSFET shown in the following figure is 3.0 mA. What type of bias i this? a. Can a JFET use this type of bias? b. Compute the value of VD. c. Compute the value of VG- RG www 10 ΜΩ +VDD +15 V www RD · 2.7 ΚΩ =Iarrow_forwardDetermine the approximate value of drain voltage (VD) of the given circuit below. VDD 20V 1.8kQ Q1 V. =10mA DSS = - 4.5V 1MQ 9100 O 15.53 V O 14.52 V O 13.27 V O 18.33 Varrow_forward
- The D-MOSFET in the figure has: IDSS-10 mA. The drain to source voltage equals approximately: VDD +15 V 0000 1 Ro 10 ΜΩ 3 V -4.52 V 4V 5.4 V RD 1.2 knarrow_forwardFind time 't' (m sec). When the transistor enters saturation VBE = 0.7V,VCE = 0.2V, Blarge = 0.7V.VCE (ON) (sat) t=0 -5 +10V 1μF 4.3k -10Varrow_forwardThe term "Bipolar" in Bipolar Junction Transistor (BJT) refers to O Two diodes O Two polarity carriers (electrons & holes) O Two junctions O Two resistancesarrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License