Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.6P
To determine

To sketch: The characteristic curves of drive current against drain source voltage for gate source voltages of 0.5V, 1V, 1.5V, 2V, 2.5V.

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For a constant value of VGS, the JFET acts as a linear resistivity device (in the ohmic region) until the depletion region of the reverse- biased gate-source junction extends the width of the channel (a condition called ......... ). Your answer
In CB configuration, the value of a=0.98A. A voltage drop of 4.9V is obtained across the resistor of 5KQ when connected in collector circuit. Find the base current. a) 0.01mA b) 0.07MA c) 0.02mA d) 0.05mA
The channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in 0) of an NMOS operating in the linear region given the following MOSFET specifications: k = 8.13µA/N2, WIL = 127, VGS = 4V, VTH = 0.50V, and Vps = 0.43V. Express your answer using 3 decimal places.

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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