Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.12P
To determine

The relative width of n-channel and p-channel devices.

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Given the data sheet for an N-channel JFET is: Idss = 10 mA, Vp = 4V. What is the value of Vgs %3D for a drain current of 3 mA flowing ? Answer:
Which of the following is a type of Metal Oxide Semiconductor Field Effect Transistor: O P channel JFET O None of them O N channel D- MOSFET in O N channel JFET A simple diode rectifier has 'ripples in the output wave which makes it unsuitable as a DC source. To overcome this one can use of a capacitor in series with a the load resistance. stion Select one: O True O False
The gate voltage in a silicon JFET in the saturation region is reduced from Vg= -3.1V to Vg= -2.8V. If the resultant drain source current IDS changes from 1mA to 1.9mA calculate the transconductance of the JFET in units of mA/V. Give your answer to 1 decimal place.

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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