Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.3, Problem D5.13E
To determine

To design: The MOSFET circuit for given specifications.

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(a) For the circuit in Figure 5–19(a), find the de parameters, IcQ1), Vc@), /ecq2), and Vc@2) if the B of each transistor is 200. / /// (b) Find A.INL), Av2(nL), Zin, Zout,, Zin, Zoutz. +Vcc +12 V RCI 47 kN Rc2 ·2.0 kΩ C2 o Vout 1.0 μF Vin 2N3904 2N3904 1.0 μF RF 100 kN REI 100 N RE2 ·270 Ω
The D-MOSFET in the figure has: IDSS-10 mA. The drain to source voltage equals approximately: VDD +15 V 0000 1 Ro 10 ΜΩ 3 V -4.52 V 4V 5.4 V RD 1.2 kn
6. Current mirror All MOSFETS in the circuit below have V, = 1 V and k, = 2 mA/V² (A = 0). Q1 and Q2 form a current mirror that supplics drain current to Q3. Calculate Ip and Vout: + 5 V 8 k Q3 o Vout Q1 Q2 -5 v

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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