Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.21P
To determine

Apparent value of threshold voltage Vt

The value of W/L ratio.

The value of current flowing when vGS=2VandvDS=0.1V

The value of vDS and the corresponding drain current.

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Given the following data for the intrinsic semiconductor of InP: Eg = 1.3 eV, me = 0.07m, mh = 0.69m, He = 4600 cm²/V-s, μh = 150 cm²/V-s; T = 300 K. Two samples of the InP is now doped as follows: Sample A: doped n-type with No = 10¹⁰ cm-³ Sample B: doped p-type with NA = 5 x 10⁰ cm-³ (a) Calculate the effective density of states in the valence and conduction bands and the intrinsic charge carrier concentration for undoped/pure InP. Calculate the majority and minority charge carrier concentrations for (i) sample A and (ii) sample B. Calculate and illustrate where the Fermi-level is located in the energy band for (i) sample A and (ii) sample B. (b) (c) (d) (e) (f) Calculate the total conductivity for (i) sample A and (ii) sample B. Now bring samples A and B together to form a pn-junction. Sketch the band diagram of the resultant pn-junction, indicating all the energy levels. Calculate the build-in voltage of the pn-junction.
At room temperature a current of 1.66 mA flows through a pn junction at a forward bias voltage of 0.15 V. What will be the current through the pn junction under reverse bias? (Use VT = 26 mV).
If the DC bias voltage, Vd, across a reverse biased PN step junction is equal to -2.5V then what is the capacitance of this junction in femto Farads? Assume that Cj0 for the junction is equal to 41.1 fF. (Note that 1 fF = 1 femto Farad = 1 x 10^-15 F.) Also assume that the built-in voltage for this junction is equal to 821mV. Answer:

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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