Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem D5.32P
To determine
The dimensional change for solving the problem, the length and width of device, ratio as given and the voltage for the standard device as well as the new deiceas given in the problem.
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There are three different main semiconductor devices of FETs which are JFET, D-MOSFET, and E-MOSFET. All of them are also known as active semiconductor devices.
i) Briefly explain the different between JFET and D-MOSFET.
ii) Given that Vp = - 6 V and IDSS = 10 mA. Draw the transfer characteristics of n-channel JFET using shorthand method.
iii) State the general relationship of JFET, D-MOSFET, and E-MOSFET.
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Given the PMOSFET circuit below with VDD = 5 V, and characteristics k = 25 μA/V2, Vth = 0.75V and R = 100, solve for the drain voltage and drain current
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- Consider an nMOS with tox=9 nm, µn=500cm²/Vs, Vt=0.7V, and W/L=10. Find the drain currents for the following cases: i. Ves=5 and VDs=5V ii. Ves=5 V and VDs=1Varrow_forwardStringing of cells in a PV panel Draw the tabbing and bus-bar wires for a 72 cell module using three substrings and a junction box mounted in the typical central location. Each substring is protected by a bypass diode. No precision drawing is needed (i.e. you don't need to draw every single cell, the main arrangement of substring and how you connect to the jnction-box is relevant.arrow_forward" A 2N5459 has VGS(off) = -8 v and IDSS = %3D 16mA. What is the drain current at the half cutoff point?arrow_forward
- Given the PMOSFET circuit below with VDD = 5 V, and characteristics k = 75 μA/V², Vth = 0.75V and R = 10000; solve for the drain voltage and drain current VDD R VD = ? ww iD = ?arrow_forwardFor an N channel E - MOSFET, what is the direction of electron flow? A) The electron flow is from source to drain B) The electron flow is from source to gate The electron flow is from drain to gate (D) The electron flow is from drain to source In FET, An outward-pointing arrow represents (A) P-type substrate B) extrinsic substrate C) intrinsic substrate D) N-type substrate When a JFET is cut off, the depletion layers are_____. A) Close together B) Far apart Touching (D) Conductingarrow_forwardThe gate voltage in a silicon JFET in the saturation region is reduced from Vg= -3.1V to Vg= -2.8V. If the resultant drain source current Ips changes from 1mA to 1.9mA calculate the transconductance of the JFET in units of mA/V. Give your answer to 1 decimal place.arrow_forward
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