Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.4, Problem 5.17E
To determine
The minimum value of drain to source voltage
The corresponding value of current
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AN-channel silicon (EG=1.1 eV) MOSFET was fabricated using N* Polysilicon gate and the threshold voltage
was found to be 1 V. Now, if the gate is changed to P Polysilicon, other things remaining same, the new
threshold voltage should be
O 2.3 V
O 2.1 V
O2v
2.2 V
If you apply a positive bias to the body of
an n-channel MOSFET relative to its
source terminal, what is the effect on the
threshold voltage?
O The threshold voltage will decrease
O None of the above
The threshold voltage will stay the same
You would not do this because it would
forward-bias the source/body pn junction
The threshold voltage will increase
Design a voltage-divider bias network using a supply of 24 V, a transistor with a beta of 100, VBE = 0.7 V ,and an operating point of ICQ = 4 mA and VCEQ = 8 V, R1 = 6R2. Choose VE =1/8 VCC.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- Consider an nMOS with tox=9 nm, µn=500cm²/Vs, Vt=0.7V, and W/L=10. Find the drain currents for the following cases: i. Ves=5 and VDs=5V ii. Ves=5 V and VDs=1Varrow_forwardThe gate voltage in a silicon JFET in the saturation region is reduced from Vg= -3.1V to Vg= -2.8V. If the resultant drain source current Ips changes from 1mA to 1.9mA calculate the transconductance of the JFET in units of mA/V. Give your answer to 1 decimal place.arrow_forwardWhat are the bias conditions of the base-emitter and base-collector junctions for a transistor to operate as an amplifier? O Both are reverse biased O The base-collector is forward and the base-emitter is reverse O Both are forward biased O The base-emitter is forward and the base-collector is reverse increase short removed decrease * the resistance of the Doping of a semiconductor material means that impurities are added to material.arrow_forward
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