Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.3, Problem 5.15E
To determine
The values of
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For a constant value of VGS, the JFET acts as a linear resistivity device (in the ohmic region) until the depletion region of the reverse- biased gate-source junction extends the width of the channel (a condition called ......... ). Your answer
(c) In the circuit below, Vcc is 5.0 volts and Re and Ra are 1.0 k2 and 15 k
respectively. Determine the potential at the collector of the transistor T₂.
Re
Re
T₁
R₁
R₁
Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper.
Answer the following using this data sheet
i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V)
ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V)
iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the
minimum values given in the data sheet.
VDD
+12 V
Rp
10 kf
2N5457
Rs
5.6 kf
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Given a depletion-type MOSFET with IDSS = 6 mA and VP = -3 V, determine the drain current at VGS = -1, 0, 1, and 2 V. Compare the difference in current levels between -1 V and 0 V with the difference between 1 V and 2 V. In the positive VGS region, does the drain current increase at a significantly higher rate than for negative values? Does the ID curve become more and more vertical with increasing positive values of VGS? Is there a linear or a nonlinear relationship between ID and VGS? Explain.arrow_forwardThe channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in Q) of an NMOS operating in the linear region given the following MOSFET specifications: k = 3.77µA/V2, wIL = 125, VGS = 3V, VTH = 0.76V, and Vps = 0.64V. Express your answer using 3 decimal places.arrow_forwardMost of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forward
- Complete the given BJT circuit. Solve for the value of the resistors and the voltage supply that will satisfy the given DC loadline. Assume IC=IE and RC=RE. Show and label properly the required final circuit. 5 mA 2.5 mA * IC IC 0 15 V 30V VCE RB B +VCC C E RC B=100 RE ...arrow_forwardFor the MOSFET circuit given here, V to = 2V, K = 160μA/V2. Design the values of R1 and R2 such that the drain current (ID) is 0.5mAand the current through the R1 and R2 is one-tenth of ID. Assume the transistor isin saturation (Hint: μ = 1 x 10-6).arrow_forwardFrom the given figure, what is the range of drain-source voltage for which the FET output follows ohm's law? I, (mA) Locus of pinch-off Dss 8 5 4 2 10 Vp (for Ves -0 V)arrow_forward
- A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.arrow_forwardQ1) Answer True or False for the following: 1- Field-effect transistors are Bipolar devices. 2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to source voltage. 3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the breakover potential. 4- The benefit of SCR Crowbar is power amplification. 5- Most op-amps require only a positive dc supply voltage.arrow_forwardThe channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in 0) of an NMOS operating in the linear region given the following MOSFET specifications: k = 4.51µA/V2, WIL = 117, VGS = 3V, VTH = 0.55V, and Vps = 0.27V. Express your answer using 3 decimal places.arrow_forward
- 4. Circuit Analysis: 5. Given: Vd1 = Vbe = 0.7V. Icq = 0 Required: The dc voltages at the bases and emitters of the transistors Q1 andQ2 and VceQ for each transistor. wwww Vcc p +24 R1 1k Q1 R2 53 0 ci C2 Rg RL 120n Q2 R3 1karrow_forwardFigure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]arrow_forwardIn the given circuit shown, all MOSFETS are N-channel MOSFETS. MOSFET M, and M₂ are matched and identical. Transistor M3 operates in saturation and parameters are kn = 0.5 mA/V2, Vth = 1V. For MOSFET M4, kn = 0.5 mA/V2 and Vth = 1.1 V. The voltage across R₁ in volts is [Voltage across Zener is 3V] M₁ 2mA §3.5ΚΩ Vx M₂ +8V M3 M V₂ + R₁ = 5kn = 3Varrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License