Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem D5.5P
To determine
The range for the control voltage
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Q1) Answer True or False for the following:
1- Field-effect transistors are Bipolar devices.
2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to
source voltage.
3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals
exceeds the breakover potential.
4- The benefit of SCR Crowbar is power amplification.
5- Most op-amps require only a positive dc supply voltage.
1) what is the Voltage & Current rating ofTriode for Alternating Current (TRIAC)
2)
5. Are the following statements correct or wrong? Justify your answer.(a) Thyristors are used only for low voltage, low current applications.(b) MOSFETs are used for high frequency applications.(c) BJT is more efficient than IGBT in high power applications.(d) GTO requires very low current applied to its gate to be turn off.(e) IGBT is a voltage driven device.
The channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in 0) of an NMOS operating in the linear region given the following MOSFET specifications: k =
4.51µA/V2, WIL = 117, VGS = 3V, VTH = 0.55V, and Vps = 0.27V. Express your answer using 3 decimal places.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- (6) Choose the correct answer: a) Which one of the following transistors cannot operate with VGS=0. 1. JFET. 2. D-MOSFET. 3. E-MOSFET. b) If the VGs in an n-channel D-MOSFET is made more negative, the drain current will. 1. Increase. 2. Decrease. 3. Be zero. c) A MOSFET differs from JFET mainly because: 1. MOSFETs do not have a physical channel. 2. The JFET has a pn junction. 3. of the power rating. d) The n-channel D-MOSFET with a positive VGs is operating in: 1. The depletion mode. 2. The enhancement mode. 3. Saturation.arrow_forwardQuestion 1: a. [Pl-1.a] Calculate the total number of transistors on a chip with following parameters: Chip area or dimensions = 4 cm x 4 cm Transistor area or dimensions = 2 µm x 2 μm b. [Pl-1.a] Give the formula for f(E) and also explain parameters in formula. Draw the diagram of f(E) as function of and determine range of value when E> H, E <µμ. KTarrow_forwardFET Construction 1. In the depletion type MOSFET there are two modes of operation : 1 2 2. In an n-channel enhancement type MOSFET if VGS = OV and VDS > Ov then ID >0 A. a) True. b) False. (if false correct the answer) 3. When a negative potential is applied to the gate terminal of a depletion type MOSFET transistor, the number of free carriers at the channel are 4. In an n-channel depletion type MOSFET consider the situation if VGS is kept constant and Vos is increased. Explain briefly what will happen to the channel if Vos is increased further. 5. In an n-channel enhancement type MOSFET if VDs ≥ VGS - Vth and VGS Vth then Ip 6. In an enhancement type MOSFET if: a) VGs > Vth and Vos = Ov then the shape of the channel is b) VGS > Vth and VDs > Ov then the shape of the channel is 7. In an n-channel depletion type MOSFET V, is a p-channel depletion type MOSFET V₁ is while forarrow_forward
- This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…arrow_forwardFor a PMOS transistor, assume that k = 16 μµA/V², W/L = 3.5 µm/0.35 μm, VGS -3.3 V, and Vr = -0.66 V. For Vps = -3.2 V, calculate Rps. =arrow_forwardFor the circuit, given VDD=15V, R1=R2=300Kohm, and the transistor with Kn=1.6mA/V² and Vtn-1.8V. Assume À=0, determine R6 in Kohm so the Q-point is (1.7mA, 2.4V). 01 R₁ www C₁ R₂ R₁ www +VDD H₁ C₂ C3 R3 voarrow_forward
- / Design a circuit using an n-channel E-MOSFET with the following datasheet specifications: Ixon) = 500 mA at VGS 10 V and VGS(h) = 1 V. Use a (+12 V) dc supply voltage with voltage divider bias. The voltage at the drain with respect to ground is to be (+7.78 V), the voltage at the source with respect to the ground is to be (+2.1 V), and the maximum current from the supply is to be 21.1 mA.arrow_forwardThere are three different main semiconductor devices of FETs which are JFET, D-MOSFET, and E-MOSFET. All of them are also known as active semiconductor devices. i) Briefly explain the different between JFET and D-MOSFET. ii) Given that Vp = - 6 V and IDSS = 10 mA. Draw the transfer characteristics of n-channel JFET using shorthand method. iii) State the general relationship of JFET, D-MOSFET, and E-MOSFET.arrow_forwardIn the given circuit shown, all MOSFETS are N-channel MOSFETS. MOSFET M, and M₂ are matched and identical. Transistor M3 operates in saturation and parameters are kn = 0.5 mA/V2, Vth = 1V. For MOSFET M4, kn = 0.5 mA/V2 and Vth = 1.1 V. The voltage across R₁ in volts is [Voltage across Zener is 3V] M₁ 2mA §3.5ΚΩ Vx M₂ +8V M3 M V₂ + R₁ = 5kn = 3Varrow_forward
- If the gate-source PN junction is forward- biased with a small voltage, the JFET channel will "open" a little more to allow greater currents through. However, the PN junction of a JFET is not built to handle any substantial current itself, and thus it is not recommended to forward-bias the junction under any circumstances. yes No botharrow_forwardFor a constant value of VGS, the JFET acts as a linear resistivity device (in the ohmic region) until the depletion region of the reverse- biased gate-source junction extends the width of the channel (a condition called ......... ). Your answerarrow_forwardExercise #4 - MOSFET Bias The following circuit is used to bias an NMOS type MOSFET transistor. In the circuit it is known that the current in the drain has a value of ID=0.5mA. The transistor manufacturer indicates that there is no modulation effect of the channel in the transistor and also provides the following data: Rs K 750μ4 / 1² VTH 0.67V Threshold voltage -2.5V Part A - Calculate V GS. Analyze the circuit and the given conditions and determine the value that the voltage between Gate and Source (VGS) must have. Justify your results with the equations and calculations performed. Part B - Calculate Rs. With the given conditions and the analysis carried out up to this point, determine the value that the resistance R S must have. Justify your results with the equations and calculations performed. Part C- Calculate V DS. With the given conditions and the analysis carried out up to this point, determine the value that the voltage between Drain and Source (VDS) must have. Just your…arrow_forward
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