Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Question
Chapter 5, Problem D5.33P
To determine
The drain current for the given condition, the change in percentage of drain current.
The way to reduce the percentage by the given factor.
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Students have asked these similar questions
An n-channel silicon MOSFET has the following parameters: W = 6 µm, L = 1.5 µm, and tox = 8
nm. When the transistor is biased in the saturation region, the drain current is Ipsat = 0.132 mA at
1.25 V. Determine the electron mobility and the
VGS
1.0 V and Ipsat
0.295 mA at VGS
threshold voltage.
Choose whether the followings are True or False.
1. The MOSFET has 2 terminals Drain and Source.
2. An E-MOSFET operates in the depletion mode.
3. The LED emits light when reverse biased.
4. In the n-channel E-MOSFET, VGs(th) has a positive value.
5. A diode conducts current when forward biased and blocks current
when reverse biased
6. An n-channel D-MOSFET with a positive Vcs is operating in the
enhancement mode.
7. The varactor diode acts as a variable capacitor under forward bias
conditions.
8. Once a BJT transistor is in the saturation, a further increase in base
current will cause the collector current to increase.
9. In a given BJT transistor amplifier, Rc=2.2KQ and r'=20 Q then the
voltage gain is equal to 110.
10. Voltage Amplification Av in a BJT is the output voltage divided by the
input current
2.
We discussed in class how the channel capacitance can be modeled in different
region of operations in MOSFETs. For your reference, the slide is shown below.
Explain how you think the model would look like if a transistor is in velocity
saturation region?
Channel Capacitances
Channel capacitance is a voltage dependent and non-linear
capacitance
S
C
P-sub Bulk
Cutoff Region
D
Operation Region
Cutoff
Linear
Saturation
S
P-sub Bulk
C
Linear Region
CGBCH
CoxWLeff
0
0
1
2
3
S
P-sub Bulk
Saturation Region
CGSCH
0
сат
CoxWL eff
1
2
CGDCH
0
CoxWLoft CoxWLoff
eff
D
0
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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Similar questions
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